Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing
Abstract State-of-the-art memristors are mostly formed by vertical metal–insulator–metal (MIM) structure, which rely on the formation of conductive filaments for resistive switching (RS). However, owing to the stochastic formation of filament, the set/reset voltage of vertical MIM memristors is diff...
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| Auteurs principaux: | , , , , , , , |
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| Format: | article |
| Langue: | EN |
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Nature Portfolio
2021
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| Accès en ligne: | https://doaj.org/article/cf214c11237f4ba4ab2322a3ed1c0b56 |
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