Style de citation APA (7e éd.)

Pharkphoumy, S., Janardhanam, V., Jang, T., Park, J., Shim, K., & Choi, C. (2021). Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation. MDPI AG.

Style de citation Chicago (17e éd.)

Pharkphoumy, Sakhone, Vallivedu Janardhanam, Tae-Hoon Jang, Jaejun Park, Kyu-Hwan Shim, et Chel-Jong Choi. Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation. MDPI AG, 2021.

Style de citation MLA (8e éd.)

Pharkphoumy, Sakhone, et al. Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation. MDPI AG, 2021.