Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation
This study presents the optimization of the lateral device geometry and thickness of the channel and barrier layers of AlGaN/GaN high electron mobility transistors (HEMTs) for the enhancement of breakdown voltage (<i>V<sub>BR</sub></i>) characteristics using a TCAD simulation...
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2021
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oai:doaj.org-article:cf3f5a0435f04fe4be43e4c5ceee95bd2021-11-11T15:39:04ZOptimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation10.3390/electronics102126422079-9292https://doaj.org/article/cf3f5a0435f04fe4be43e4c5ceee95bd2021-10-01T00:00:00Zhttps://www.mdpi.com/2079-9292/10/21/2642https://doaj.org/toc/2079-9292This study presents the optimization of the lateral device geometry and thickness of the channel and barrier layers of AlGaN/GaN high electron mobility transistors (HEMTs) for the enhancement of breakdown voltage (<i>V<sub>BR</sub></i>) characteristics using a TCAD simulation. The effect of device geometry on the device performance was explored by varying the device design parameters, such as the field plate length (<i>L</i><i><sub>FP</sub></i>), gate-to-drain length (<i>L</i><i><sub>GD</sub></i>), gate-to-source length (<i>L</i><i><sub>GS</sub></i>), gate length (<i>L</i><i><sub>G</sub></i>), thickness of the Si<sub>3</sub>N<sub>4</sub> passivation layer (<i>T<sub>ox</sub></i>), thickness of the GaN channel (<i>T<sub>ch</sub></i>), and AlGaN barrier (<i>T</i><i><sub>barrier</sub></i>). The <i>V<sub>BR</sub></i> was estimated from the off-state drain current versus the drain voltage (<i>I<sub>DS</sub>–V<sub>DS</sub></i>) curve, and it exhibited a strong dependence on the length and thickness of the parameters. The optimum values of <i>V<sub>BR</sub></i> for all the device’s geometrical parameters were evaluated, based on which, an optimized device geometry of the field-plated AlGaN/GaN HEMT structure was proposed. The optimized AlGaN/GaN HEMT structure exhibited <i>V<sub>BR</sub></i> = 970 V at <i>I</i><i><sub>GS</sub></i> = 0.14 A/mm, which was considerably higher than the results obtained in previous studies. The results obtained in this study could provide vital information for the selection of the device geometry for the implementation of HEMT structures.Sakhone PharkphoumyVallivedu JanardhanamTae-Hoon JangJaejun ParkKyu-Hwan ShimChel-Jong ChoiMDPI AGarticleAlGaN/GaNHEMTdevice parametersbreakdown voltagehigh powerTCAD simulationElectronicsTK7800-8360ENElectronics, Vol 10, Iss 2642, p 2642 (2021) |
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| collection |
DOAJ |
| language |
EN |
| topic |
AlGaN/GaN HEMT device parameters breakdown voltage high power TCAD simulation Electronics TK7800-8360 |
| spellingShingle |
AlGaN/GaN HEMT device parameters breakdown voltage high power TCAD simulation Electronics TK7800-8360 Sakhone Pharkphoumy Vallivedu Janardhanam Tae-Hoon Jang Jaejun Park Kyu-Hwan Shim Chel-Jong Choi Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation |
| description |
This study presents the optimization of the lateral device geometry and thickness of the channel and barrier layers of AlGaN/GaN high electron mobility transistors (HEMTs) for the enhancement of breakdown voltage (<i>V<sub>BR</sub></i>) characteristics using a TCAD simulation. The effect of device geometry on the device performance was explored by varying the device design parameters, such as the field plate length (<i>L</i><i><sub>FP</sub></i>), gate-to-drain length (<i>L</i><i><sub>GD</sub></i>), gate-to-source length (<i>L</i><i><sub>GS</sub></i>), gate length (<i>L</i><i><sub>G</sub></i>), thickness of the Si<sub>3</sub>N<sub>4</sub> passivation layer (<i>T<sub>ox</sub></i>), thickness of the GaN channel (<i>T<sub>ch</sub></i>), and AlGaN barrier (<i>T</i><i><sub>barrier</sub></i>). The <i>V<sub>BR</sub></i> was estimated from the off-state drain current versus the drain voltage (<i>I<sub>DS</sub>–V<sub>DS</sub></i>) curve, and it exhibited a strong dependence on the length and thickness of the parameters. The optimum values of <i>V<sub>BR</sub></i> for all the device’s geometrical parameters were evaluated, based on which, an optimized device geometry of the field-plated AlGaN/GaN HEMT structure was proposed. The optimized AlGaN/GaN HEMT structure exhibited <i>V<sub>BR</sub></i> = 970 V at <i>I</i><i><sub>GS</sub></i> = 0.14 A/mm, which was considerably higher than the results obtained in previous studies. The results obtained in this study could provide vital information for the selection of the device geometry for the implementation of HEMT structures. |
| format |
article |
| author |
Sakhone Pharkphoumy Vallivedu Janardhanam Tae-Hoon Jang Jaejun Park Kyu-Hwan Shim Chel-Jong Choi |
| author_facet |
Sakhone Pharkphoumy Vallivedu Janardhanam Tae-Hoon Jang Jaejun Park Kyu-Hwan Shim Chel-Jong Choi |
| author_sort |
Sakhone Pharkphoumy |
| title |
Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation |
| title_short |
Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation |
| title_full |
Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation |
| title_fullStr |
Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation |
| title_full_unstemmed |
Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation |
| title_sort |
optimized device geometry of normally-on field-plate algan/gan high electron mobility transistors for high breakdown performance using tcad simulation |
| publisher |
MDPI AG |
| publishDate |
2021 |
| url |
https://doaj.org/article/cf3f5a0435f04fe4be43e4c5ceee95bd |
| work_keys_str_mv |
AT sakhonepharkphoumy optimizeddevicegeometryofnormallyonfieldplatealganganhighelectronmobilitytransistorsforhighbreakdownperformanceusingtcadsimulation AT vallivedujanardhanam optimizeddevicegeometryofnormallyonfieldplatealganganhighelectronmobilitytransistorsforhighbreakdownperformanceusingtcadsimulation AT taehoonjang optimizeddevicegeometryofnormallyonfieldplatealganganhighelectronmobilitytransistorsforhighbreakdownperformanceusingtcadsimulation AT jaejunpark optimizeddevicegeometryofnormallyonfieldplatealganganhighelectronmobilitytransistorsforhighbreakdownperformanceusingtcadsimulation AT kyuhwanshim optimizeddevicegeometryofnormallyonfieldplatealganganhighelectronmobilitytransistorsforhighbreakdownperformanceusingtcadsimulation AT cheljongchoi optimizeddevicegeometryofnormallyonfieldplatealganganhighelectronmobilitytransistorsforhighbreakdownperformanceusingtcadsimulation |
| _version_ |
1718434698895556608 |