Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation

Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation

This study presents the optimization of the lateral device geometry and thickness of the channel and barrier layers of AlGaN/GaN high electron mobility transistors (HEMTs) for the enhancement of breakdown voltage (<i>V<sub>BR</sub></i>) characteristics using a TCAD simulation...

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Autores principales: Sakhone Pharkphoumy, Vallivedu Janardhanam, Tae-Hoon Jang, Jaejun Park, Kyu-Hwan Shim, Chel-Jong Choi
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
AlGaN/GaN
HEMT
device parameters
breakdown voltage
high power
TCAD simulation
Electronics
TK7800-8360
Acceso en línea:https://doaj.org/article/cf3f5a0435f04fe4be43e4c5ceee95bd
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