Self-compensation in arsenic doping of CdTe

Abstract Efficient p-type doping in CdTe has remained a critical challenge for decades, limiting the performance of CdTe-based semiconductor devices. Arsenic is a promising p-type dopant; however, reproducible doping with high concentration is difficult and carrier lifetime is low. We systematically...

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Autores principales:	Tursun Ablekim, Santosh K. Swain, Wan-Jian Yin, Katherine Zaunbrecher, James Burst, Teresa M. Barnes, Darius Kuciauskas, Su-Huai Wei, Kelvin G. Lynn
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/cf4d25f730ef4e0b8240744ebc1628f9
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spelling	oai:doaj.org-article:cf4d25f730ef4e0b8240744ebc1628f92021-12-02T11:53:06ZSelf-compensation in arsenic doping of CdTe10.1038/s41598-017-04719-02045-2322https://doaj.org/article/cf4d25f730ef4e0b8240744ebc1628f92017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04719-0https://doaj.org/toc/2045-2322Abstract Efficient p-type doping in CdTe has remained a critical challenge for decades, limiting the performance of CdTe-based semiconductor devices. Arsenic is a promising p-type dopant; however, reproducible doping with high concentration is difficult and carrier lifetime is low. We systematically studied defect structures in As-doped CdTe using high-purity single crystal wafers to investigate the mechanisms that limit p-type doping. Two As-doped CdTe with varying acceptor density and two undoped CdTe were grown in Cd-rich and Te-rich environments. The defect structures were investigated by thermoelectric-effect spectroscopy (TEES), and first-principles calculations were used for identifying and assigning the experimentally observed defects. Measurements revealed activation of As is very low in both As-doped samples with very short lifetimes indicating strong compensation and the presence of significant carrier trapping defects. Defect studies suggest two acceptors and one donor level were introduced by As doping with activation energies at ~88 meV, ~293 meV and ~377 meV. In particular, the peak shown at ~162 K in the TEES spectra is very prominent in both As-doped samples, indicating a signature of AX-center donors. The AX-centers are believed to be responsible for most of the compensation because of their low formation energy and very prominent peak intensity in TEES spectra.Tursun AblekimSantosh K. SwainWan-Jian YinKatherine ZaunbrecherJames BurstTeresa M. BarnesDarius KuciauskasSu-Huai WeiKelvin G. LynnNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Tursun Ablekim Santosh K. Swain Wan-Jian Yin Katherine Zaunbrecher James Burst Teresa M. Barnes Darius Kuciauskas Su-Huai Wei Kelvin G. Lynn Self-compensation in arsenic doping of CdTe
description	Abstract Efficient p-type doping in CdTe has remained a critical challenge for decades, limiting the performance of CdTe-based semiconductor devices. Arsenic is a promising p-type dopant; however, reproducible doping with high concentration is difficult and carrier lifetime is low. We systematically studied defect structures in As-doped CdTe using high-purity single crystal wafers to investigate the mechanisms that limit p-type doping. Two As-doped CdTe with varying acceptor density and two undoped CdTe were grown in Cd-rich and Te-rich environments. The defect structures were investigated by thermoelectric-effect spectroscopy (TEES), and first-principles calculations were used for identifying and assigning the experimentally observed defects. Measurements revealed activation of As is very low in both As-doped samples with very short lifetimes indicating strong compensation and the presence of significant carrier trapping defects. Defect studies suggest two acceptors and one donor level were introduced by As doping with activation energies at ~88 meV, ~293 meV and ~377 meV. In particular, the peak shown at ~162 K in the TEES spectra is very prominent in both As-doped samples, indicating a signature of AX-center donors. The AX-centers are believed to be responsible for most of the compensation because of their low formation energy and very prominent peak intensity in TEES spectra.
format	article
author	Tursun Ablekim Santosh K. Swain Wan-Jian Yin Katherine Zaunbrecher James Burst Teresa M. Barnes Darius Kuciauskas Su-Huai Wei Kelvin G. Lynn
author_facet	Tursun Ablekim Santosh K. Swain Wan-Jian Yin Katherine Zaunbrecher James Burst Teresa M. Barnes Darius Kuciauskas Su-Huai Wei Kelvin G. Lynn
author_sort	Tursun Ablekim
title	Self-compensation in arsenic doping of CdTe
title_short	Self-compensation in arsenic doping of CdTe
title_full	Self-compensation in arsenic doping of CdTe
title_fullStr	Self-compensation in arsenic doping of CdTe
title_full_unstemmed	Self-compensation in arsenic doping of CdTe
title_sort	self-compensation in arsenic doping of cdte
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/cf4d25f730ef4e0b8240744ebc1628f9
work_keys_str_mv	AT tursunablekim selfcompensationinarsenicdopingofcdte AT santoshkswain selfcompensationinarsenicdopingofcdte AT wanjianyin selfcompensationinarsenicdopingofcdte AT katherinezaunbrecher selfcompensationinarsenicdopingofcdte AT jamesburst selfcompensationinarsenicdopingofcdte AT teresambarnes selfcompensationinarsenicdopingofcdte AT dariuskuciauskas selfcompensationinarsenicdopingofcdte AT suhuaiwei selfcompensationinarsenicdopingofcdte AT kelvinglynn selfcompensationinarsenicdopingofcdte
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Self-compensation in arsenic doping of CdTe

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