Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures

Direct epitaxial growth of vertically stacked layered materials is a promising route towards scalable fabrication of van der Waals heterostructures. Here, the authors demonstrate molecular beam epitaxy of semiconducting MoSe2on a hBN/Ru(0001) substrate.

Guardado en:
Detalles Bibliográficos
Autores principales: Qiang Zhang, Yuxuan Chen, Chendong Zhang, Chi-Ruei Pan, Mei-Yin Chou, Changgan Zeng, Chih-Kang Shih
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
Materias:
Q
Acceso en línea:https://doaj.org/article/cf549fbfc8424b5a92cf9b563b0ead4e
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!