Preparation of ZnTe thin films using chemical bath deposition technique

Chemical bath deposition was used to prepare thin films of ZnTe. The density of compounds (0.5–2) ml in 50 ml of distilled water, the precipitation time (10–80 min), and the solution temperature during the precipitation process (15–85 °C) have been changed during the preparation of the ZnTe thin fil...

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Autores principales:	Iman Ahmed Younus, Anwar M. Ezzat, Mohammad M. Uonis
Formato:	article
Lenguaje:	EN
Publicado:	Taylor & Francis Group 2020
Materias:	znte thin film semiconductor and chemical bath deposition Materials of engineering and construction. Mechanics of materials TA401-492 Polymers and polymer manufacture TP1080-1185
Acceso en línea:	https://doaj.org/article/cf5f7b3d08ed4ae59c14522dea784c29
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spelling	oai:doaj.org-article:cf5f7b3d08ed4ae59c14522dea784c292021-12-02T13:34:25ZPreparation of ZnTe thin films using chemical bath deposition technique2055-033210.1080/20550324.2020.1865712https://doaj.org/article/cf5f7b3d08ed4ae59c14522dea784c292020-12-01T00:00:00Zhttp://dx.doi.org/10.1080/20550324.2020.1865712https://doaj.org/toc/2055-0332Chemical bath deposition was used to prepare thin films of ZnTe. The density of compounds (0.5–2) ml in 50 ml of distilled water, the precipitation time (10–80 min), and the solution temperature during the precipitation process (15–85 °C) have been changed during the preparation of the ZnTe thin films to get the optimal deposition conditions of a semiconductor. The effect of these parameters has been determined by studying the optical properties of the films which included the transmittance and absorbance as a function of the wavelength and energy gap. The energy gap remains constant at about 2.7 eV over all precipitation times for each density of compound. We have also found that the energy gap of the films decreases with increasing solution temperature, reaching approximately 2.9-3eV at 15 °C and decreasing to 2.4 eV at 85 °C.Iman Ahmed YounusAnwar M. EzzatMohammad M. UonisTaylor & Francis Grouparticlezntethin filmsemiconductor and chemical bath depositionMaterials of engineering and construction. Mechanics of materialsTA401-492Polymers and polymer manufactureTP1080-1185ENNanocomposites, Vol 0, Iss 0, Pp 1-8 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	znte thin film semiconductor and chemical bath deposition Materials of engineering and construction. Mechanics of materials TA401-492 Polymers and polymer manufacture TP1080-1185
spellingShingle	znte thin film semiconductor and chemical bath deposition Materials of engineering and construction. Mechanics of materials TA401-492 Polymers and polymer manufacture TP1080-1185 Iman Ahmed Younus Anwar M. Ezzat Mohammad M. Uonis Preparation of ZnTe thin films using chemical bath deposition technique
description	Chemical bath deposition was used to prepare thin films of ZnTe. The density of compounds (0.5–2) ml in 50 ml of distilled water, the precipitation time (10–80 min), and the solution temperature during the precipitation process (15–85 °C) have been changed during the preparation of the ZnTe thin films to get the optimal deposition conditions of a semiconductor. The effect of these parameters has been determined by studying the optical properties of the films which included the transmittance and absorbance as a function of the wavelength and energy gap. The energy gap remains constant at about 2.7 eV over all precipitation times for each density of compound. We have also found that the energy gap of the films decreases with increasing solution temperature, reaching approximately 2.9-3eV at 15 °C and decreasing to 2.4 eV at 85 °C.
format	article
author	Iman Ahmed Younus Anwar M. Ezzat Mohammad M. Uonis
author_facet	Iman Ahmed Younus Anwar M. Ezzat Mohammad M. Uonis
author_sort	Iman Ahmed Younus
title	Preparation of ZnTe thin films using chemical bath deposition technique
title_short	Preparation of ZnTe thin films using chemical bath deposition technique
title_full	Preparation of ZnTe thin films using chemical bath deposition technique
title_fullStr	Preparation of ZnTe thin films using chemical bath deposition technique
title_full_unstemmed	Preparation of ZnTe thin films using chemical bath deposition technique
title_sort	preparation of znte thin films using chemical bath deposition technique
publisher	Taylor & Francis Group
publishDate	2020
url	https://doaj.org/article/cf5f7b3d08ed4ae59c14522dea784c29
work_keys_str_mv	AT imanahmedyounus preparationofzntethinfilmsusingchemicalbathdepositiontechnique AT anwarmezzat preparationofzntethinfilmsusingchemicalbathdepositiontechnique AT mohammadmuonis preparationofzntethinfilmsusingchemicalbathdepositiontechnique
_version_	1718392822755753984

Preparation of ZnTe thin films using chemical bath deposition technique

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