The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

Abstract The aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce...

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Autores principales:	Mikolaj Grabowski, Ewa Grzanka, Szymon Grzanka, Artur Lachowski, Julita Smalc-Koziorowska, Robert Czernecki, Roman Hrytsak, Joanna Moneta, Grzegorz Gawlik, Andrzej Turos, Mike Leszczyński
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/cfd5facfc02b4db98643cce30b6037c0
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spelling	oai:doaj.org-article:cfd5facfc02b4db98643cce30b6037c02021-12-02T13:57:59ZThe impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs10.1038/s41598-021-81017-w2045-2322https://doaj.org/article/cfd5facfc02b4db98643cce30b6037c02021-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-81017-whttps://doaj.org/toc/2045-2322Abstract The aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.Mikolaj GrabowskiEwa GrzankaSzymon GrzankaArtur LachowskiJulita Smalc-KoziorowskaRobert CzerneckiRoman HrytsakJoanna MonetaGrzegorz GawlikAndrzej TurosMike LeszczyńskiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Mikolaj Grabowski Ewa Grzanka Szymon Grzanka Artur Lachowski Julita Smalc-Koziorowska Robert Czernecki Roman Hrytsak Joanna Moneta Grzegorz Gawlik Andrzej Turos Mike Leszczyński The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
description	Abstract The aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.
format	article
author	Mikolaj Grabowski Ewa Grzanka Szymon Grzanka Artur Lachowski Julita Smalc-Koziorowska Robert Czernecki Roman Hrytsak Joanna Moneta Grzegorz Gawlik Andrzej Turos Mike Leszczyński
author_facet	Mikolaj Grabowski Ewa Grzanka Szymon Grzanka Artur Lachowski Julita Smalc-Koziorowska Robert Czernecki Roman Hrytsak Joanna Moneta Grzegorz Gawlik Andrzej Turos Mike Leszczyński
author_sort	Mikolaj Grabowski
title	The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
title_short	The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
title_full	The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
title_fullStr	The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
title_full_unstemmed	The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
title_sort	impact of point defects in n-type gan layers on thermal decomposition of ingan/gan qws
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/cfd5facfc02b4db98643cce30b6037c0
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The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

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