The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

Abstract The aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce...

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Bibliographic Details
Main Authors: Mikolaj Grabowski, Ewa Grzanka, Szymon Grzanka, Artur Lachowski, Julita Smalc-Koziorowska, Robert Czernecki, Roman Hrytsak, Joanna Moneta, Grzegorz Gawlik, Andrzej Turos, Mike Leszczyński
Format: article
Language:EN
Published: Nature Portfolio 2021
Subjects:
Medicine
R
Science
Q
Online Access:https://doaj.org/article/cfd5facfc02b4db98643cce30b6037c0
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https://doaj.org/article/cfd5facfc02b4db98643cce30b6037c0

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