Shear induced deformation twinning evolution in thermoelectric InSb
Abstract Twin boundary (TB) engineering has been widely applied to enhance the strength and plasticity of metals and alloys, but is rarely adopted in thermoelectric (TE) semiconductors. Our previous first-principles results showed that nanotwins can strengthen TE Indium Antimony (InSb) through In–Sb...
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Autores principales: | Zhongtao Lu, Ben Huang, Guodong Li, Xiaolian Zhang, Qi An, Bo Duan, Pengcheng Zhai, Qingjie Zhang, William A. Goddard |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
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Materias: | |
Acceso en línea: | https://doaj.org/article/d07bbdae1440408a89706a22c463609f |
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