Solar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-Al-content AlGaN layers
Solar-blind deep-ultraviolet (UV) photodetectors (PDs) with high responsivity and fast response have attracted significant attention in environmental, industrial, biological, and military applications. AlGaN is a representative semiconductor material in the field of solar-blind detection; semiconduc...
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oai:doaj.org-article:d0a2d685005446e485648fc47ea054222021-12-01T18:52:07ZSolar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-Al-content AlGaN layers2158-322610.1063/5.0072093https://doaj.org/article/d0a2d685005446e485648fc47ea054222021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0072093https://doaj.org/toc/2158-3226Solar-blind deep-ultraviolet (UV) photodetectors (PDs) with high responsivity and fast response have attracted significant attention in environmental, industrial, biological, and military applications. AlGaN is a representative semiconductor material in the field of solar-blind detection; semiconductor performance can be accelerated by combining it with high-transparency, high-stability contact electrode materials. In this study, solar-blind deep-UV metal–semiconductor–metal (MSM) PDs were fabricated based on two-dimensional reduced graphene oxide (rGO) contacts formed on various high-Al-content AlGaN semiconductors. A low dark current in the order of a few picoamperes and a fast photoresponse time of a few tens of milliseconds were confirmed. The investigation of the effects of front- and back-side illumination showed that the photocurrents and corresponding responsivities of the PDs drastically improved under back-side illumination. In detail, the peak locations of the responsivity–wavelength curves were downshifted from 290 nm with a responsivity of 0.0518 A/W for the rGO/Al0.5Ga0.5N MSM PD to 250 nm with a responsivity of 0.0113 A/W for the rGO/Al0.7Ga0.3N MSM PD under back-side illumination. These results indicate that rGO contacts on AlGaN provide a viable approach for developing solar-blind deep-UV PDs.Bhishma PanditJaehee ChoAIP Publishing LLCarticlePhysicsQC1-999ENAIP Advances, Vol 11, Iss 11, Pp 115322-115322-7 (2021) |
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Physics QC1-999 Bhishma Pandit Jaehee Cho Solar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-Al-content AlGaN layers |
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Solar-blind deep-ultraviolet (UV) photodetectors (PDs) with high responsivity and fast response have attracted significant attention in environmental, industrial, biological, and military applications. AlGaN is a representative semiconductor material in the field of solar-blind detection; semiconductor performance can be accelerated by combining it with high-transparency, high-stability contact electrode materials. In this study, solar-blind deep-UV metal–semiconductor–metal (MSM) PDs were fabricated based on two-dimensional reduced graphene oxide (rGO) contacts formed on various high-Al-content AlGaN semiconductors. A low dark current in the order of a few picoamperes and a fast photoresponse time of a few tens of milliseconds were confirmed. The investigation of the effects of front- and back-side illumination showed that the photocurrents and corresponding responsivities of the PDs drastically improved under back-side illumination. In detail, the peak locations of the responsivity–wavelength curves were downshifted from 290 nm with a responsivity of 0.0518 A/W for the rGO/Al0.5Ga0.5N MSM PD to 250 nm with a responsivity of 0.0113 A/W for the rGO/Al0.7Ga0.3N MSM PD under back-side illumination. These results indicate that rGO contacts on AlGaN provide a viable approach for developing solar-blind deep-UV PDs. |
format |
article |
author |
Bhishma Pandit Jaehee Cho |
author_facet |
Bhishma Pandit Jaehee Cho |
author_sort |
Bhishma Pandit |
title |
Solar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-Al-content AlGaN layers |
title_short |
Solar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-Al-content AlGaN layers |
title_full |
Solar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-Al-content AlGaN layers |
title_fullStr |
Solar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-Al-content AlGaN layers |
title_full_unstemmed |
Solar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-Al-content AlGaN layers |
title_sort |
solar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-al-content algan layers |
publisher |
AIP Publishing LLC |
publishDate |
2021 |
url |
https://doaj.org/article/d0a2d685005446e485648fc47ea05422 |
work_keys_str_mv |
AT bhishmapandit solarblindultravioletphotodetectorswiththermallyreducedgrapheneoxideformedonhighalcontentalganlayers AT jaeheecho solarblindultravioletphotodetectorswiththermallyreducedgrapheneoxideformedonhighalcontentalganlayers |
_version_ |
1718404656423501824 |