Solar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-Al-content AlGaN layers

Solar-blind deep-ultraviolet (UV) photodetectors (PDs) with high responsivity and fast response have attracted significant attention in environmental, industrial, biological, and military applications. AlGaN is a representative semiconductor material in the field of solar-blind detection; semiconduc...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Bhishma Pandit, Jaehee Cho
Formato: article
Lenguaje:EN
Publicado: AIP Publishing LLC 2021
Materias:
Acceso en línea:https://doaj.org/article/d0a2d685005446e485648fc47ea05422
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:d0a2d685005446e485648fc47ea05422
record_format dspace
spelling oai:doaj.org-article:d0a2d685005446e485648fc47ea054222021-12-01T18:52:07ZSolar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-Al-content AlGaN layers2158-322610.1063/5.0072093https://doaj.org/article/d0a2d685005446e485648fc47ea054222021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0072093https://doaj.org/toc/2158-3226Solar-blind deep-ultraviolet (UV) photodetectors (PDs) with high responsivity and fast response have attracted significant attention in environmental, industrial, biological, and military applications. AlGaN is a representative semiconductor material in the field of solar-blind detection; semiconductor performance can be accelerated by combining it with high-transparency, high-stability contact electrode materials. In this study, solar-blind deep-UV metal–semiconductor–metal (MSM) PDs were fabricated based on two-dimensional reduced graphene oxide (rGO) contacts formed on various high-Al-content AlGaN semiconductors. A low dark current in the order of a few picoamperes and a fast photoresponse time of a few tens of milliseconds were confirmed. The investigation of the effects of front- and back-side illumination showed that the photocurrents and corresponding responsivities of the PDs drastically improved under back-side illumination. In detail, the peak locations of the responsivity–wavelength curves were downshifted from 290 nm with a responsivity of 0.0518 A/W for the rGO/Al0.5Ga0.5N MSM PD to 250 nm with a responsivity of 0.0113 A/W for the rGO/Al0.7Ga0.3N MSM PD under back-side illumination. These results indicate that rGO contacts on AlGaN provide a viable approach for developing solar-blind deep-UV PDs.Bhishma PanditJaehee ChoAIP Publishing LLCarticlePhysicsQC1-999ENAIP Advances, Vol 11, Iss 11, Pp 115322-115322-7 (2021)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
spellingShingle Physics
QC1-999
Bhishma Pandit
Jaehee Cho
Solar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-Al-content AlGaN layers
description Solar-blind deep-ultraviolet (UV) photodetectors (PDs) with high responsivity and fast response have attracted significant attention in environmental, industrial, biological, and military applications. AlGaN is a representative semiconductor material in the field of solar-blind detection; semiconductor performance can be accelerated by combining it with high-transparency, high-stability contact electrode materials. In this study, solar-blind deep-UV metal–semiconductor–metal (MSM) PDs were fabricated based on two-dimensional reduced graphene oxide (rGO) contacts formed on various high-Al-content AlGaN semiconductors. A low dark current in the order of a few picoamperes and a fast photoresponse time of a few tens of milliseconds were confirmed. The investigation of the effects of front- and back-side illumination showed that the photocurrents and corresponding responsivities of the PDs drastically improved under back-side illumination. In detail, the peak locations of the responsivity–wavelength curves were downshifted from 290 nm with a responsivity of 0.0518 A/W for the rGO/Al0.5Ga0.5N MSM PD to 250 nm with a responsivity of 0.0113 A/W for the rGO/Al0.7Ga0.3N MSM PD under back-side illumination. These results indicate that rGO contacts on AlGaN provide a viable approach for developing solar-blind deep-UV PDs.
format article
author Bhishma Pandit
Jaehee Cho
author_facet Bhishma Pandit
Jaehee Cho
author_sort Bhishma Pandit
title Solar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-Al-content AlGaN layers
title_short Solar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-Al-content AlGaN layers
title_full Solar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-Al-content AlGaN layers
title_fullStr Solar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-Al-content AlGaN layers
title_full_unstemmed Solar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-Al-content AlGaN layers
title_sort solar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-al-content algan layers
publisher AIP Publishing LLC
publishDate 2021
url https://doaj.org/article/d0a2d685005446e485648fc47ea05422
work_keys_str_mv AT bhishmapandit solarblindultravioletphotodetectorswiththermallyreducedgrapheneoxideformedonhighalcontentalganlayers
AT jaeheecho solarblindultravioletphotodetectorswiththermallyreducedgrapheneoxideformedonhighalcontentalganlayers
_version_ 1718404656423501824