Solar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-Al-content AlGaN layers
Solar-blind deep-ultraviolet (UV) photodetectors (PDs) with high responsivity and fast response have attracted significant attention in environmental, industrial, biological, and military applications. AlGaN is a representative semiconductor material in the field of solar-blind detection; semiconduc...
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| Autores principales: | , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
AIP Publishing LLC
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/d0a2d685005446e485648fc47ea05422 |
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