In-Situ Stretching Patterned Graphene Nanoribbons in the Transmission Electron Microscope

Abstract The mechanical response of patterned graphene nanoribbons (GNRs) with a width less than 100 nm was studied in-situ using quantitative tensile testing in a transmission electron microscope (TEM). A high degree of crystallinity was confirmed for patterned nanoribbons before and after the in-s...

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Autores principales:	Zhongquan Liao, Leonardo Medrano Sandonas, Tao Zhang, Martin Gall, Arezoo Dianat, Rafael Gutierrez, Uwe Mühle, Jürgen Gluch, Rainer Jordan, Gianaurelio Cuniberti, Ehrenfried Zschech
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/d0bb4b0abfe14062883ee222a1511a04
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spelling	oai:doaj.org-article:d0bb4b0abfe14062883ee222a1511a042021-12-02T16:08:22ZIn-Situ Stretching Patterned Graphene Nanoribbons in the Transmission Electron Microscope10.1038/s41598-017-00227-32045-2322https://doaj.org/article/d0bb4b0abfe14062883ee222a1511a042017-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-00227-3https://doaj.org/toc/2045-2322Abstract The mechanical response of patterned graphene nanoribbons (GNRs) with a width less than 100 nm was studied in-situ using quantitative tensile testing in a transmission electron microscope (TEM). A high degree of crystallinity was confirmed for patterned nanoribbons before and after the in-situ experiment by selected area electron diffraction (SAED) patterns. However, the maximum local true strain of the nanoribbons was determined to be only about 3%. The simultaneously recorded low-loss electron energy loss spectrum (EELS) on the stretched nanoribbons did not reveal any bandgap opening. Density Functional Based Tight Binding (DFTB) simulation was conducted to predict a feasible bandgap opening as a function of width in GNRs at low strain. The bandgap of unstrained armchair graphene nanoribbons (AGNRs) vanished for a width of about 14.75 nm, and this critical width was reduced to 11.21 nm for a strain level of 2.2%. The measured low tensile failure strain may limit the practical capability of tuning the bandgap of patterned graphene nanostructures by strain engineering, and therefore, it should be considered in bandgap design for graphene-based electronic devices by strain engineering.Zhongquan LiaoLeonardo Medrano SandonasTao ZhangMartin GallArezoo DianatRafael GutierrezUwe MühleJürgen GluchRainer JordanGianaurelio CunibertiEhrenfried ZschechNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Zhongquan Liao Leonardo Medrano Sandonas Tao Zhang Martin Gall Arezoo Dianat Rafael Gutierrez Uwe Mühle Jürgen Gluch Rainer Jordan Gianaurelio Cuniberti Ehrenfried Zschech In-Situ Stretching Patterned Graphene Nanoribbons in the Transmission Electron Microscope
description	Abstract The mechanical response of patterned graphene nanoribbons (GNRs) with a width less than 100 nm was studied in-situ using quantitative tensile testing in a transmission electron microscope (TEM). A high degree of crystallinity was confirmed for patterned nanoribbons before and after the in-situ experiment by selected area electron diffraction (SAED) patterns. However, the maximum local true strain of the nanoribbons was determined to be only about 3%. The simultaneously recorded low-loss electron energy loss spectrum (EELS) on the stretched nanoribbons did not reveal any bandgap opening. Density Functional Based Tight Binding (DFTB) simulation was conducted to predict a feasible bandgap opening as a function of width in GNRs at low strain. The bandgap of unstrained armchair graphene nanoribbons (AGNRs) vanished for a width of about 14.75 nm, and this critical width was reduced to 11.21 nm for a strain level of 2.2%. The measured low tensile failure strain may limit the practical capability of tuning the bandgap of patterned graphene nanostructures by strain engineering, and therefore, it should be considered in bandgap design for graphene-based electronic devices by strain engineering.
format	article
author	Zhongquan Liao Leonardo Medrano Sandonas Tao Zhang Martin Gall Arezoo Dianat Rafael Gutierrez Uwe Mühle Jürgen Gluch Rainer Jordan Gianaurelio Cuniberti Ehrenfried Zschech
author_facet	Zhongquan Liao Leonardo Medrano Sandonas Tao Zhang Martin Gall Arezoo Dianat Rafael Gutierrez Uwe Mühle Jürgen Gluch Rainer Jordan Gianaurelio Cuniberti Ehrenfried Zschech
author_sort	Zhongquan Liao
title	In-Situ Stretching Patterned Graphene Nanoribbons in the Transmission Electron Microscope
title_short	In-Situ Stretching Patterned Graphene Nanoribbons in the Transmission Electron Microscope
title_full	In-Situ Stretching Patterned Graphene Nanoribbons in the Transmission Electron Microscope
title_fullStr	In-Situ Stretching Patterned Graphene Nanoribbons in the Transmission Electron Microscope
title_full_unstemmed	In-Situ Stretching Patterned Graphene Nanoribbons in the Transmission Electron Microscope
title_sort	in-situ stretching patterned graphene nanoribbons in the transmission electron microscope
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/d0bb4b0abfe14062883ee222a1511a04
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In-Situ Stretching Patterned Graphene Nanoribbons in the Transmission Electron Microscope

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