Stateful characterization of resistive switching TiO2 with electron beam induced currents

Oxide-based memristors hold promise for artificial neuromorphic computing, yet the detail of the switching mechanism—filament formation—remains largely unknown. Hoskins et al. provide nanoscale imaging of this process using electron beam induced current microscopy and relate it to resistive states....

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Autores principales:	Brian D. Hoskins, Gina C. Adam, Evgheni Strelcov, Nikolai Zhitenev, Andrei Kolmakov, Dmitri B. Strukov, Jabez J. McClelland
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/d0fb653e348142e1b8662ad03c0cfa6e
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spelling	oai:doaj.org-article:d0fb653e348142e1b8662ad03c0cfa6e2021-12-02T14:42:25ZStateful characterization of resistive switching TiO2 with electron beam induced currents10.1038/s41467-017-02116-92041-1723https://doaj.org/article/d0fb653e348142e1b8662ad03c0cfa6e2017-12-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-02116-9https://doaj.org/toc/2041-1723Oxide-based memristors hold promise for artificial neuromorphic computing, yet the detail of the switching mechanism—filament formation—remains largely unknown. Hoskins et al. provide nanoscale imaging of this process using electron beam induced current microscopy and relate it to resistive states.Brian D. HoskinsGina C. AdamEvgheni StrelcovNikolai ZhitenevAndrei KolmakovDmitri B. StrukovJabez J. McClellandNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-11 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Brian D. Hoskins Gina C. Adam Evgheni Strelcov Nikolai Zhitenev Andrei Kolmakov Dmitri B. Strukov Jabez J. McClelland Stateful characterization of resistive switching TiO2 with electron beam induced currents
description	Oxide-based memristors hold promise for artificial neuromorphic computing, yet the detail of the switching mechanism—filament formation—remains largely unknown. Hoskins et al. provide nanoscale imaging of this process using electron beam induced current microscopy and relate it to resistive states.
format	article
author	Brian D. Hoskins Gina C. Adam Evgheni Strelcov Nikolai Zhitenev Andrei Kolmakov Dmitri B. Strukov Jabez J. McClelland
author_facet	Brian D. Hoskins Gina C. Adam Evgheni Strelcov Nikolai Zhitenev Andrei Kolmakov Dmitri B. Strukov Jabez J. McClelland
author_sort	Brian D. Hoskins
title	Stateful characterization of resistive switching TiO2 with electron beam induced currents
title_short	Stateful characterization of resistive switching TiO2 with electron beam induced currents
title_full	Stateful characterization of resistive switching TiO2 with electron beam induced currents
title_fullStr	Stateful characterization of resistive switching TiO2 with electron beam induced currents
title_full_unstemmed	Stateful characterization of resistive switching TiO2 with electron beam induced currents
title_sort	stateful characterization of resistive switching tio2 with electron beam induced currents
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/d0fb653e348142e1b8662ad03c0cfa6e
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Stateful characterization of resistive switching TiO2 with electron beam induced currents

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