Probing embedded topological modes in bulk-like GeTe-Sb2Te3 heterostructures

Abstract The interface between topological and normal insulators hosts metallic states that appear due to the change in band topology. While topological states at a surface, i.e., a topological insulator-air/vacuum interface, have been studied intensely, topological states at a solid-solid interface...

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Autores principales: Hisao Nakamura, Johannes Hofmann, Nobuki Inoue, Sebastian Koelling, Paul M. Koenraad, Gregor Mussler, Detlev Grützmacher, Vijay Narayan
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Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/d11c7ac399a3471a845d6e573600f5a8
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spelling oai:doaj.org-article:d11c7ac399a3471a845d6e573600f5a82021-12-02T15:11:52ZProbing embedded topological modes in bulk-like GeTe-Sb2Te3 heterostructures10.1038/s41598-020-76885-72045-2322https://doaj.org/article/d11c7ac399a3471a845d6e573600f5a82020-12-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-76885-7https://doaj.org/toc/2045-2322Abstract The interface between topological and normal insulators hosts metallic states that appear due to the change in band topology. While topological states at a surface, i.e., a topological insulator-air/vacuum interface, have been studied intensely, topological states at a solid-solid interface have been less explored. Here we combine experiment and theory to study such embedded topological states (ETSs) in heterostructures of GeTe (normal insulator) and $$\hbox {Sb}_2$$ Sb 2 $$\hbox {Te}_3$$ Te 3 (topological insulator). We analyse their dependence on the interface and their confinement characteristics. First, to characterise the heterostructures, we evaluate the GeTe-Sb $$_2$$ 2 Te $$_3$$ 3 band offset using X-ray photoemission spectroscopy, and chart the elemental composition using atom probe tomography. We then use first-principles to independently calculate the band offset and also parametrise the band structure within a four-band continuum model. Our analysis reveals, strikingly, that under realistic conditions, the interfacial topological modes are delocalised over many lattice spacings. In addition, the first-principles calculations indicate that the ETSs are relatively robust to disorder and this may have practical ramifications. Our study provides insights into how to manipulate topological modes in heterostructures and also provides a basis for recent experimental findings [Nguyen et al. Sci. Rep. 6, 27716 (2016)] where ETSs were seen to couple over thick layers.Hisao NakamuraJohannes HofmannNobuki InoueSebastian KoellingPaul M. KoenraadGregor MusslerDetlev GrützmacherVijay NarayanNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-10 (2020)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Hisao Nakamura
Johannes Hofmann
Nobuki Inoue
Sebastian Koelling
Paul M. Koenraad
Gregor Mussler
Detlev Grützmacher
Vijay Narayan
Probing embedded topological modes in bulk-like GeTe-Sb2Te3 heterostructures
description Abstract The interface between topological and normal insulators hosts metallic states that appear due to the change in band topology. While topological states at a surface, i.e., a topological insulator-air/vacuum interface, have been studied intensely, topological states at a solid-solid interface have been less explored. Here we combine experiment and theory to study such embedded topological states (ETSs) in heterostructures of GeTe (normal insulator) and $$\hbox {Sb}_2$$ Sb 2 $$\hbox {Te}_3$$ Te 3 (topological insulator). We analyse their dependence on the interface and their confinement characteristics. First, to characterise the heterostructures, we evaluate the GeTe-Sb $$_2$$ 2 Te $$_3$$ 3 band offset using X-ray photoemission spectroscopy, and chart the elemental composition using atom probe tomography. We then use first-principles to independently calculate the band offset and also parametrise the band structure within a four-band continuum model. Our analysis reveals, strikingly, that under realistic conditions, the interfacial topological modes are delocalised over many lattice spacings. In addition, the first-principles calculations indicate that the ETSs are relatively robust to disorder and this may have practical ramifications. Our study provides insights into how to manipulate topological modes in heterostructures and also provides a basis for recent experimental findings [Nguyen et al. Sci. Rep. 6, 27716 (2016)] where ETSs were seen to couple over thick layers.
format article
author Hisao Nakamura
Johannes Hofmann
Nobuki Inoue
Sebastian Koelling
Paul M. Koenraad
Gregor Mussler
Detlev Grützmacher
Vijay Narayan
author_facet Hisao Nakamura
Johannes Hofmann
Nobuki Inoue
Sebastian Koelling
Paul M. Koenraad
Gregor Mussler
Detlev Grützmacher
Vijay Narayan
author_sort Hisao Nakamura
title Probing embedded topological modes in bulk-like GeTe-Sb2Te3 heterostructures
title_short Probing embedded topological modes in bulk-like GeTe-Sb2Te3 heterostructures
title_full Probing embedded topological modes in bulk-like GeTe-Sb2Te3 heterostructures
title_fullStr Probing embedded topological modes in bulk-like GeTe-Sb2Te3 heterostructures
title_full_unstemmed Probing embedded topological modes in bulk-like GeTe-Sb2Te3 heterostructures
title_sort probing embedded topological modes in bulk-like gete-sb2te3 heterostructures
publisher Nature Portfolio
publishDate 2020
url https://doaj.org/article/d11c7ac399a3471a845d6e573600f5a8
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