Hysteresis modeling in ballistic carbon nanotube field-effect transistors

Yian Liu,1 Mateus S Moura,2 Ademir J Costa,2,3 Luiz Alberto L de Almeida,4 Makarand Paranjape,1 Marcio Fontana21Department of Physics, Georgetown University, Washington, DC, USA; 2Department of Electrical Engineering, Federal University of Bahia, Salvador, Brazil; 3Federal Institute of Bahia, Santo...

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Autores principales:	Liu Y, Moura MS, Costa AJ, Almeida LA, Paranjape M, Fontana M
Formato:	article
Lenguaje:	EN
Publicado:	Dove Medical Press 2014
Materias:	Medical technology R855-855.5 Chemical technology TP1-1185
Acceso en línea:	https://doaj.org/article/d16595ebf9b9436e8e640d30a8ebd072
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spelling	oai:doaj.org-article:d16595ebf9b9436e8e640d30a8ebd0722021-12-02T08:14:07ZHysteresis modeling in ballistic carbon nanotube field-effect transistors1177-8903https://doaj.org/article/d16595ebf9b9436e8e640d30a8ebd0722014-07-01T00:00:00Zhttp://www.dovepress.com/hysteresis-modeling-in-ballistic-carbon-nanotube-field-effect-transist-a17518https://doaj.org/toc/1177-8903 Yian Liu,1 Mateus S Moura,2 Ademir J Costa,2,3 Luiz Alberto L de Almeida,4 Makarand Paranjape,1 Marcio Fontana21Department of Physics, Georgetown University, Washington, DC, USA; 2Department of Electrical Engineering, Federal University of Bahia, Salvador, Brazil; 3Federal Institute of Bahia, Santo Amaro, Brazil; 4Engineering, Modeling and Applied Social Sciences Center, Federal University of ABC, Santo André, BrazilAbstract: Theoretical models are adapted to describe the hysteresis effects seen in the electrical characteristics of carbon nanotube field-effect transistors. The ballistic transport model describes the contributions of conduction energy sub-bands over carbon nanotube field-effect transistor drain current as a function of drain-source and gate-source voltages as well as other physical parameters of the device. The limiting-loop proximity model, originally developed to understand magnetic hysteresis, is also utilized in this work. The curves obtained from our developed model corroborate well with the experimentally derived hysteretic behavior of the transistors. Modeling the hysteresis behavior will enable designers to reliably use these effects in both analog and memory applications.Keywords: ballistic transport, nanoscale device, solid-state deviceLiu YMoura MSCosta AJAlmeida LAParanjape MFontana MDove Medical PressarticleMedical technologyR855-855.5Chemical technologyTP1-1185ENNanotechnology, Science and Applications, Vol 2014, Iss default, Pp 55-61 (2014)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medical technology R855-855.5 Chemical technology TP1-1185
spellingShingle	Medical technology R855-855.5 Chemical technology TP1-1185 Liu Y Moura MS Costa AJ Almeida LA Paranjape M Fontana M Hysteresis modeling in ballistic carbon nanotube field-effect transistors
description	Yian Liu,1 Mateus S Moura,2 Ademir J Costa,2,3 Luiz Alberto L de Almeida,4 Makarand Paranjape,1 Marcio Fontana21Department of Physics, Georgetown University, Washington, DC, USA; 2Department of Electrical Engineering, Federal University of Bahia, Salvador, Brazil; 3Federal Institute of Bahia, Santo Amaro, Brazil; 4Engineering, Modeling and Applied Social Sciences Center, Federal University of ABC, Santo André, BrazilAbstract: Theoretical models are adapted to describe the hysteresis effects seen in the electrical characteristics of carbon nanotube field-effect transistors. The ballistic transport model describes the contributions of conduction energy sub-bands over carbon nanotube field-effect transistor drain current as a function of drain-source and gate-source voltages as well as other physical parameters of the device. The limiting-loop proximity model, originally developed to understand magnetic hysteresis, is also utilized in this work. The curves obtained from our developed model corroborate well with the experimentally derived hysteretic behavior of the transistors. Modeling the hysteresis behavior will enable designers to reliably use these effects in both analog and memory applications.Keywords: ballistic transport, nanoscale device, solid-state device
format	article
author	Liu Y Moura MS Costa AJ Almeida LA Paranjape M Fontana M
author_facet	Liu Y Moura MS Costa AJ Almeida LA Paranjape M Fontana M
author_sort	Liu Y
title	Hysteresis modeling in ballistic carbon nanotube field-effect transistors
title_short	Hysteresis modeling in ballistic carbon nanotube field-effect transistors
title_full	Hysteresis modeling in ballistic carbon nanotube field-effect transistors
title_fullStr	Hysteresis modeling in ballistic carbon nanotube field-effect transistors
title_full_unstemmed	Hysteresis modeling in ballistic carbon nanotube field-effect transistors
title_sort	hysteresis modeling in ballistic carbon nanotube field-effect transistors
publisher	Dove Medical Press
publishDate	2014
url	https://doaj.org/article/d16595ebf9b9436e8e640d30a8ebd072
work_keys_str_mv	AT liuy hysteresismodelinginballisticcarbonnanotubefieldeffecttransistors AT mourams hysteresismodelinginballisticcarbonnanotubefieldeffecttransistors AT costaaj hysteresismodelinginballisticcarbonnanotubefieldeffecttransistors AT almeidala hysteresismodelinginballisticcarbonnanotubefieldeffecttransistors AT paranjapem hysteresismodelinginballisticcarbonnanotubefieldeffecttransistors AT fontanam hysteresismodelinginballisticcarbonnanotubefieldeffecttransistors
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Hysteresis modeling in ballistic carbon nanotube field-effect transistors

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