Structural defects in a nanomesh of bulk MoS2 using an anodic aluminum oxide template for photoluminescence efficiency enhancement

Abstract Two-dimensional (2D) materials beyond graphene have attracted considerable interest because of the zero bandgap drawbacks of graphene. Transition metal dichalcogenides (TMDs), such as MoS2 and WSe2, are the potential candidates for next 2D materials because atomically thin layers of TMDs ex...

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Autores principales:	TaeWan Kim, DongHwan Kim, Chan Ho Choi, DaeHwa Joung, JongHoo Park, Jae Cheol Shin, Sang-Woo Kang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/d1e0595228a141a9b83fc4ae2f60803f
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spelling	oai:doaj.org-article:d1e0595228a141a9b83fc4ae2f60803f2021-12-02T11:40:54ZStructural defects in a nanomesh of bulk MoS2 using an anodic aluminum oxide template for photoluminescence efficiency enhancement10.1038/s41598-018-25045-z2045-2322https://doaj.org/article/d1e0595228a141a9b83fc4ae2f60803f2018-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-25045-zhttps://doaj.org/toc/2045-2322Abstract Two-dimensional (2D) materials beyond graphene have attracted considerable interest because of the zero bandgap drawbacks of graphene. Transition metal dichalcogenides (TMDs), such as MoS2 and WSe2, are the potential candidates for next 2D materials because atomically thin layers of TMDs exhibit unique and versatile electrical and optical properties. Although bulk TMDs materials have an indirect bandgap, an indirect-to-direct bandgap transition is observed in monolayers of TMDs (MoS2, WSe2, and MoSe2). Optical properties of TMD films can be improved by the introduction of structural defects. For example, large-area spatial tuning of the optical transition of bulk MoS2 films is achieved by using an anodic aluminum oxide (AAO) template to induce structural defects such as edge- and terrace-terminated defects in a nanomesh structure. Strong photoluminescence emission peaks with a band gap of 1.81 eV are observed, possibly because of radiative transition at the defect sites. This work shows that the AAO template lithography method has potential for the production of homogenous large-scale nanomesh structures for practical semiconductor processing applications in future MoS2-based electronic and optical devices.TaeWan KimDongHwan KimChan Ho ChoiDaeHwa JoungJongHoo ParkJae Cheol ShinSang-Woo KangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-6 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q TaeWan Kim DongHwan Kim Chan Ho Choi DaeHwa Joung JongHoo Park Jae Cheol Shin Sang-Woo Kang Structural defects in a nanomesh of bulk MoS2 using an anodic aluminum oxide template for photoluminescence efficiency enhancement
description	Abstract Two-dimensional (2D) materials beyond graphene have attracted considerable interest because of the zero bandgap drawbacks of graphene. Transition metal dichalcogenides (TMDs), such as MoS2 and WSe2, are the potential candidates for next 2D materials because atomically thin layers of TMDs exhibit unique and versatile electrical and optical properties. Although bulk TMDs materials have an indirect bandgap, an indirect-to-direct bandgap transition is observed in monolayers of TMDs (MoS2, WSe2, and MoSe2). Optical properties of TMD films can be improved by the introduction of structural defects. For example, large-area spatial tuning of the optical transition of bulk MoS2 films is achieved by using an anodic aluminum oxide (AAO) template to induce structural defects such as edge- and terrace-terminated defects in a nanomesh structure. Strong photoluminescence emission peaks with a band gap of 1.81 eV are observed, possibly because of radiative transition at the defect sites. This work shows that the AAO template lithography method has potential for the production of homogenous large-scale nanomesh structures for practical semiconductor processing applications in future MoS2-based electronic and optical devices.
format	article
author	TaeWan Kim DongHwan Kim Chan Ho Choi DaeHwa Joung JongHoo Park Jae Cheol Shin Sang-Woo Kang
author_facet	TaeWan Kim DongHwan Kim Chan Ho Choi DaeHwa Joung JongHoo Park Jae Cheol Shin Sang-Woo Kang
author_sort	TaeWan Kim
title	Structural defects in a nanomesh of bulk MoS2 using an anodic aluminum oxide template for photoluminescence efficiency enhancement
title_short	Structural defects in a nanomesh of bulk MoS2 using an anodic aluminum oxide template for photoluminescence efficiency enhancement
title_full	Structural defects in a nanomesh of bulk MoS2 using an anodic aluminum oxide template for photoluminescence efficiency enhancement
title_fullStr	Structural defects in a nanomesh of bulk MoS2 using an anodic aluminum oxide template for photoluminescence efficiency enhancement
title_full_unstemmed	Structural defects in a nanomesh of bulk MoS2 using an anodic aluminum oxide template for photoluminescence efficiency enhancement
title_sort	structural defects in a nanomesh of bulk mos2 using an anodic aluminum oxide template for photoluminescence efficiency enhancement
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/d1e0595228a141a9b83fc4ae2f60803f
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_version_	1718395546279870464

Structural defects in a nanomesh of bulk MoS2 using an anodic aluminum oxide template for photoluminescence efficiency enhancement

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