Determination of individual contact interfaces in carbon nanotube network-based transistors
Abstract Carbon nanotubes (CNTs) used as semiconducting channels induce high mobility, thermal conductivity, mechanical flexibility, and chemical stability in field-effect, thin-film transistors (TFTs). However, the contact interfaces in CNT-TFTs have contact resistances that are difficult to reduce...
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Autores principales: | , , , , , , |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2017
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Materias: | |
Acceso en línea: | https://doaj.org/article/d1f4dcb6890b429380cbbc7697630043 |
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Sumario: | Abstract Carbon nanotubes (CNTs) used as semiconducting channels induce high mobility, thermal conductivity, mechanical flexibility, and chemical stability in field-effect, thin-film transistors (TFTs). However, the contact interfaces in CNT-TFTs have contact resistances that are difficult to reduce; this contact resistance can eventually limit the overall performance of CNT-TFTs. The contact interface between the source/drain electrodes and CNTs, especially for those CNT-TFTs in which the channel comprises randomly networked CNTs, plays a particularly dominant role in determining the performance and degree of variability in CNT-TFTs. However, no studies have reported a determination method that individually extracts each contact resistance at the source/drain electrodes. The present work presents an efficient method for directly determining the contact interfaces in CNT-TFTs by extracting each contact resistance produced at the source (R S ) and drain (R D ) electrodes. Moreover, we comprehensively simulated the randomly networked CNTs using an in-depth Monte-Carlo method, which provides an efficient method for visualizing the uniformity of a CNT network with various controllable CNT parameters. The proposed method provides guidance and a means for optimizing the design of the CNT network channel in CNT-TFTs and additional insights into improving the performance of CNT-TFTs. |
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