Excitonic absorption of the light in heterojunctions Bi2O3-InSe

The interface layer of the Bi O /InSe:Cd (0.10 at. %) heterojunction was investigated using optical and electroreflection spectra. The fundamental absorption edge of InSe:Cd interface layer, at 78 K, is formed by the excitonic absorption band n=1, with maximum at 1.328 eV. Its direct optical b...

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Autor principal:	Evtodiev, Igor
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2009
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/d216ebcb44d64c9e8740537419673e66
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spelling	oai:doaj.org-article:d216ebcb44d64c9e8740537419673e662021-11-21T12:05:12ZExcitonic absorption of the light in heterojunctions Bi2O3-InSe 2537-63651810-648Xhttps://doaj.org/article/d216ebcb44d64c9e8740537419673e662009-05-01T00:00:00Zhttps://mjps.nanotech.md/archive/2009/article/4045https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The interface layer of the Bi O /InSe:Cd (0.10 at. %) heterojunction was investigated using optical and electroreflection spectra. The fundamental absorption edge of InSe:Cd interface layer, at 78 K, is formed by the excitonic absorption band n=1, with maximum at 1.328 eV. Its direct optical band gap corresponds to electron transitions at the M point of the Brillouin zone, and is equal to 2.557 eV at 78 K. Evtodiev, IgorD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 8, Iss 2, Pp 163-168 (2009)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Evtodiev, Igor Excitonic absorption of the light in heterojunctions Bi2O3-InSe
description	The interface layer of the Bi O /InSe:Cd (0.10 at. %) heterojunction was investigated using optical and electroreflection spectra. The fundamental absorption edge of InSe:Cd interface layer, at 78 K, is formed by the excitonic absorption band n=1, with maximum at 1.328 eV. Its direct optical band gap corresponds to electron transitions at the M point of the Brillouin zone, and is equal to 2.557 eV at 78 K.
format	article
author	Evtodiev, Igor
author_facet	Evtodiev, Igor
author_sort	Evtodiev, Igor
title	Excitonic absorption of the light in heterojunctions Bi2O3-InSe
title_short	Excitonic absorption of the light in heterojunctions Bi2O3-InSe
title_full	Excitonic absorption of the light in heterojunctions Bi2O3-InSe
title_fullStr	Excitonic absorption of the light in heterojunctions Bi2O3-InSe
title_full_unstemmed	Excitonic absorption of the light in heterojunctions Bi2O3-InSe
title_sort	excitonic absorption of the light in heterojunctions bi2o3-inse
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2009
url	https://doaj.org/article/d216ebcb44d64c9e8740537419673e66
work_keys_str_mv	AT evtodievigor excitonicabsorptionofthelightinheterojunctionsbi2o3inse
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Excitonic absorption of the light in heterojunctions Bi2O3-InSe

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