Excitonic absorption of the light in heterojunctions Bi2O3-InSe
The interface layer of the Bi O /InSe:Cd (0.10 at. %) heterojunction was investigated using optical and electroreflection spectra. The fundamental absorption edge of InSe:Cd interface layer, at 78 K, is formed by the excitonic absorption band n=1, with maximum at 1.328 eV. Its direct optical b...
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| Formato: | article |
| Lenguaje: | EN |
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2009
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| Acceso en línea: | https://doaj.org/article/d216ebcb44d64c9e8740537419673e66 |
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