Growth of ZnO crystals by CVT methods

Features of the growth of ZnO single crystals by chemical vapor transport with the use of H2, HCl, H2 HCl mixture, and CO as transport agents and dopant sources are discussed in the present paper. Based on the investigation of electrical, luminescent, and optical properties of these samples with v...

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Autores principales:	Colibaba, Gleb, Goncearenco, Evghenii, Nedeoglo, Dumitru, Nedeoglo, Natalia
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2012
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/d217dc2a80d545f2b851759afd109dcc
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spelling	oai:doaj.org-article:d217dc2a80d545f2b851759afd109dcc2021-11-21T12:01:00ZGrowth of ZnO crystals by CVT methods2537-63651810-648Xhttps://doaj.org/article/d217dc2a80d545f2b851759afd109dcc2012-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2012/article/22422https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Features of the growth of ZnO single crystals by chemical vapor transport with the use of H2, HCl, H2 HCl mixture, and CO as transport agents and dopant sources are discussed in the present paper. Based on the investigation of electrical, luminescent, and optical properties of these samples with various doping level, the prospects of the used techniques for the obtaining of large-area substrates with controlled parameters are estimated.Colibaba, GlebGoncearenco, EvgheniiNedeoglo, DumitruNedeoglo, NataliaD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 11, Iss 4, Pp 366-370 (2012)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Colibaba, Gleb Goncearenco, Evghenii Nedeoglo, Dumitru Nedeoglo, Natalia Growth of ZnO crystals by CVT methods
description	Features of the growth of ZnO single crystals by chemical vapor transport with the use of H2, HCl, H2 HCl mixture, and CO as transport agents and dopant sources are discussed in the present paper. Based on the investigation of electrical, luminescent, and optical properties of these samples with various doping level, the prospects of the used techniques for the obtaining of large-area substrates with controlled parameters are estimated.
format	article
author	Colibaba, Gleb Goncearenco, Evghenii Nedeoglo, Dumitru Nedeoglo, Natalia
author_facet	Colibaba, Gleb Goncearenco, Evghenii Nedeoglo, Dumitru Nedeoglo, Natalia
author_sort	Colibaba, Gleb
title	Growth of ZnO crystals by CVT methods
title_short	Growth of ZnO crystals by CVT methods
title_full	Growth of ZnO crystals by CVT methods
title_fullStr	Growth of ZnO crystals by CVT methods
title_full_unstemmed	Growth of ZnO crystals by CVT methods
title_sort	growth of zno crystals by cvt methods
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2012
url	https://doaj.org/article/d217dc2a80d545f2b851759afd109dcc
work_keys_str_mv	AT colibabagleb growthofznocrystalsbycvtmethods AT goncearencoevghenii growthofznocrystalsbycvtmethods AT nedeoglodumitru growthofznocrystalsbycvtmethods AT nedeoglonatalia growthofznocrystalsbycvtmethods
_version_	1718419332754571264

Growth of ZnO crystals by CVT methods

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