Manipulation of crystalline structure, magnetic performance, and topological feature in Mn3Ge films

The Mn3X (where X = Ga, Ge, Sn, etc.) compounds have appealing prospects for spintronic applications due to their various crystal structures and magnetic properties for the design of reliable high-density memories. However, controlled growth of high-quality Mn3X thin films remains challenging in mat...

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Autores principales:	Xiaolei Wang, Chen Zhang, Qianqian Yang, Lei Liu, Dong Pan, Xue Chen, Jinxiang Deng, Tianrui Zhai, Hui-Xiong Deng
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Biotechnology TP248.13-248.65 Physics QC1-999
Acceso en línea:	https://doaj.org/article/d22d8dbabb904532b848bd5489d4aff5
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spelling	oai:doaj.org-article:d22d8dbabb904532b848bd5489d4aff52021-12-01T18:51:23ZManipulation of crystalline structure, magnetic performance, and topological feature in Mn3Ge films2166-532X10.1063/5.0071093https://doaj.org/article/d22d8dbabb904532b848bd5489d4aff52021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0071093https://doaj.org/toc/2166-532XThe Mn3X (where X = Ga, Ge, Sn, etc.) compounds have appealing prospects for spintronic applications due to their various crystal structures and magnetic properties for the design of reliable high-density memories. However, controlled growth of high-quality Mn3X thin films remains challenging in material science. Here, we reported the controlled film growth of Heusler alloy Mn3Ge, which could crystallize in respective tetragonal and hexagonal structures. The tetragonal D022-type Mn3Ge film exhibits strong perpendicular ferromagnetic anisotropy, while the hexagonal D019-type Mn3Ge film indicates non-collinear triangular antiferromagnetic order. From our experimental observations of structure characterizations, magnetic properties, anomalous Hall effect, and magnetoresistance measurements, we realized the manipulation of spin orientations and topological features. Majority/minority spin polarized Fermi surface and density of states of both tetragonal and hexagonal Mn3Ge structures were investigated by density functional theory calculations. Our work not only opens up technology routes toward the development of Mn3X-based devices for applications in topological spintronics and spin-torque memories but also leads to engineer the physical properties for fundamental study.Xiaolei WangChen ZhangQianqian YangLei LiuDong PanXue ChenJinxiang DengTianrui ZhaiHui-Xiong DengAIP Publishing LLCarticleBiotechnologyTP248.13-248.65PhysicsQC1-999ENAPL Materials, Vol 9, Iss 11, Pp 111107-111107-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Biotechnology TP248.13-248.65 Physics QC1-999
spellingShingle	Biotechnology TP248.13-248.65 Physics QC1-999 Xiaolei Wang Chen Zhang Qianqian Yang Lei Liu Dong Pan Xue Chen Jinxiang Deng Tianrui Zhai Hui-Xiong Deng Manipulation of crystalline structure, magnetic performance, and topological feature in Mn3Ge films
description	The Mn3X (where X = Ga, Ge, Sn, etc.) compounds have appealing prospects for spintronic applications due to their various crystal structures and magnetic properties for the design of reliable high-density memories. However, controlled growth of high-quality Mn3X thin films remains challenging in material science. Here, we reported the controlled film growth of Heusler alloy Mn3Ge, which could crystallize in respective tetragonal and hexagonal structures. The tetragonal D022-type Mn3Ge film exhibits strong perpendicular ferromagnetic anisotropy, while the hexagonal D019-type Mn3Ge film indicates non-collinear triangular antiferromagnetic order. From our experimental observations of structure characterizations, magnetic properties, anomalous Hall effect, and magnetoresistance measurements, we realized the manipulation of spin orientations and topological features. Majority/minority spin polarized Fermi surface and density of states of both tetragonal and hexagonal Mn3Ge structures were investigated by density functional theory calculations. Our work not only opens up technology routes toward the development of Mn3X-based devices for applications in topological spintronics and spin-torque memories but also leads to engineer the physical properties for fundamental study.
format	article
author	Xiaolei Wang Chen Zhang Qianqian Yang Lei Liu Dong Pan Xue Chen Jinxiang Deng Tianrui Zhai Hui-Xiong Deng
author_facet	Xiaolei Wang Chen Zhang Qianqian Yang Lei Liu Dong Pan Xue Chen Jinxiang Deng Tianrui Zhai Hui-Xiong Deng
author_sort	Xiaolei Wang
title	Manipulation of crystalline structure, magnetic performance, and topological feature in Mn3Ge films
title_short	Manipulation of crystalline structure, magnetic performance, and topological feature in Mn3Ge films
title_full	Manipulation of crystalline structure, magnetic performance, and topological feature in Mn3Ge films
title_fullStr	Manipulation of crystalline structure, magnetic performance, and topological feature in Mn3Ge films
title_full_unstemmed	Manipulation of crystalline structure, magnetic performance, and topological feature in Mn3Ge films
title_sort	manipulation of crystalline structure, magnetic performance, and topological feature in mn3ge films
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/d22d8dbabb904532b848bd5489d4aff5
work_keys_str_mv	AT xiaoleiwang manipulationofcrystallinestructuremagneticperformanceandtopologicalfeatureinmn3gefilms AT chenzhang manipulationofcrystallinestructuremagneticperformanceandtopologicalfeatureinmn3gefilms AT qianqianyang manipulationofcrystallinestructuremagneticperformanceandtopologicalfeatureinmn3gefilms AT leiliu manipulationofcrystallinestructuremagneticperformanceandtopologicalfeatureinmn3gefilms AT dongpan manipulationofcrystallinestructuremagneticperformanceandtopologicalfeatureinmn3gefilms AT xuechen manipulationofcrystallinestructuremagneticperformanceandtopologicalfeatureinmn3gefilms AT jinxiangdeng manipulationofcrystallinestructuremagneticperformanceandtopologicalfeatureinmn3gefilms AT tianruizhai manipulationofcrystallinestructuremagneticperformanceandtopologicalfeatureinmn3gefilms AT huixiongdeng manipulationofcrystallinestructuremagneticperformanceandtopologicalfeatureinmn3gefilms
_version_	1718404722432409600

Manipulation of crystalline structure, magnetic performance, and topological feature in Mn3Ge films

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