Manipulation of crystalline structure, magnetic performance, and topological feature in Mn3Ge films

The Mn3X (where X = Ga, Ge, Sn, etc.) compounds have appealing prospects for spintronic applications due to their various crystal structures and magnetic properties for the design of reliable high-density memories. However, controlled growth of high-quality Mn3X thin films remains challenging in mat...

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Auteurs principaux: Xiaolei Wang, Chen Zhang, Qianqian Yang, Lei Liu, Dong Pan, Xue Chen, Jinxiang Deng, Tianrui Zhai, Hui-Xiong Deng
Format: article
Langue:EN
Publié: AIP Publishing LLC 2021
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Accès en ligne:https://doaj.org/article/d22d8dbabb904532b848bd5489d4aff5
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