Manipulation of crystalline structure, magnetic performance, and topological feature in Mn3Ge films
The Mn3X (where X = Ga, Ge, Sn, etc.) compounds have appealing prospects for spintronic applications due to their various crystal structures and magnetic properties for the design of reliable high-density memories. However, controlled growth of high-quality Mn3X thin films remains challenging in mat...
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| Auteurs principaux: | , , , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
AIP Publishing LLC
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/d22d8dbabb904532b848bd5489d4aff5 |
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