Manipulation of crystalline structure, magnetic performance, and topological feature in Mn3Ge films
The Mn3X (where X = Ga, Ge, Sn, etc.) compounds have appealing prospects for spintronic applications due to their various crystal structures and magnetic properties for the design of reliable high-density memories. However, controlled growth of high-quality Mn3X thin films remains challenging in mat...
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Main Authors: | , , , , , , , , |
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Format: | article |
Language: | EN |
Published: |
AIP Publishing LLC
2021
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Subjects: | |
Online Access: | https://doaj.org/article/d22d8dbabb904532b848bd5489d4aff5 |
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