Undulated Step Structure on the (000<inline-formula><math display="inline"><semantics><mrow><mover><mn>1</mn><mo stretchy="false">¯</mo></mover></mrow></semantics></math></inline-formula>) Facet of Physical Vapor Transport-Grown 4H-SiC Crystals

The step structure on the (000<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mover><mn>1</mn><mo stretchy="false">¯</mo></mover></mrow></semantics&g...

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Autores principales:	Hiroaki Shinya, Masataka Nakano, Noboru Ohtani
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	silicon carbide facet step structure nitrogen doping step bunching Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Acceso en línea:	https://doaj.org/article/d235f1cc401248b1bd624ac4a956d0bb
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spelling	oai:doaj.org-article:d235f1cc401248b1bd624ac4a956d0bb2021-11-25T18:13:51ZUndulated Step Structure on the (000<inline-formula><math display="inline"><semantics><mrow><mover><mn>1</mn><mo stretchy="false">¯</mo></mover></mrow></semantics></math></inline-formula>) Facet of Physical Vapor Transport-Grown 4H-SiC Crystals10.3390/ma142268161996-1944https://doaj.org/article/d235f1cc401248b1bd624ac4a956d0bb2021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/22/6816https://doaj.org/toc/1996-1944The step structure on the (000<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mover><mn>1</mn><mo stretchy="false">¯</mo></mover></mrow></semantics></math></inline-formula>)C facet of 4H-SiC boules grown by the physical vapor transport growth method with different nitrogen doping concentrations was examined in various scales, using different types of microscopy, such as differential interference contrast optical microscopy (DICM) and atomic force microscopy (AFM). DICM observations unveiled characteristic macroscopic surface features of the facet dependent on the nitrogen doping concentration. AFM observations revealed the existence of step trains of half unit-cell height (0.5 nm) on the facet and found that their separation was undulated with a characteristic wavelength dependent on the nitrogen doping concentration; the higher the nitrogen concentration, the longer was the undulation wavelength of step separation. Based on these results, we discussed the origin and formation mechanism of the separation-undulated step structure observed on the (000<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mover><mn>1</mn><mo stretchy="false">¯</mo></mover></mrow></semantics></math></inline-formula>)C facet of nitrogen-doped 4H-SiC boules.Hiroaki ShinyaMasataka NakanoNoboru OhtaniMDPI AGarticlesilicon carbidefacetstep structurenitrogen dopingstep bunchingTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6816, p 6816 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	silicon carbide facet step structure nitrogen doping step bunching Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
spellingShingle	silicon carbide facet step structure nitrogen doping step bunching Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Hiroaki Shinya Masataka Nakano Noboru Ohtani Undulated Step Structure on the (000<inline-formula><math display="inline"><semantics><mrow><mover><mn>1</mn><mo stretchy="false">¯</mo></mover></mrow></semantics></math></inline-formula>) Facet of Physical Vapor Transport-Grown 4H-SiC Crystals
description	The step structure on the (000<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mover><mn>1</mn><mo stretchy="false">¯</mo></mover></mrow></semantics></math></inline-formula>)C facet of 4H-SiC boules grown by the physical vapor transport growth method with different nitrogen doping concentrations was examined in various scales, using different types of microscopy, such as differential interference contrast optical microscopy (DICM) and atomic force microscopy (AFM). DICM observations unveiled characteristic macroscopic surface features of the facet dependent on the nitrogen doping concentration. AFM observations revealed the existence of step trains of half unit-cell height (0.5 nm) on the facet and found that their separation was undulated with a characteristic wavelength dependent on the nitrogen doping concentration; the higher the nitrogen concentration, the longer was the undulation wavelength of step separation. Based on these results, we discussed the origin and formation mechanism of the separation-undulated step structure observed on the (000<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mover><mn>1</mn><mo stretchy="false">¯</mo></mover></mrow></semantics></math></inline-formula>)C facet of nitrogen-doped 4H-SiC boules.
format	article
author	Hiroaki Shinya Masataka Nakano Noboru Ohtani
author_facet	Hiroaki Shinya Masataka Nakano Noboru Ohtani
author_sort	Hiroaki Shinya
title	Undulated Step Structure on the (000<inline-formula><math display="inline"><semantics><mrow><mover><mn>1</mn><mo stretchy="false">¯</mo></mover></mrow></semantics></math></inline-formula>) Facet of Physical Vapor Transport-Grown 4H-SiC Crystals
title_short	Undulated Step Structure on the (000<inline-formula><math display="inline"><semantics><mrow><mover><mn>1</mn><mo stretchy="false">¯</mo></mover></mrow></semantics></math></inline-formula>) Facet of Physical Vapor Transport-Grown 4H-SiC Crystals
title_full	Undulated Step Structure on the (000<inline-formula><math display="inline"><semantics><mrow><mover><mn>1</mn><mo stretchy="false">¯</mo></mover></mrow></semantics></math></inline-formula>) Facet of Physical Vapor Transport-Grown 4H-SiC Crystals
title_fullStr	Undulated Step Structure on the (000<inline-formula><math display="inline"><semantics><mrow><mover><mn>1</mn><mo stretchy="false">¯</mo></mover></mrow></semantics></math></inline-formula>) Facet of Physical Vapor Transport-Grown 4H-SiC Crystals
title_full_unstemmed	Undulated Step Structure on the (000<inline-formula><math display="inline"><semantics><mrow><mover><mn>1</mn><mo stretchy="false">¯</mo></mover></mrow></semantics></math></inline-formula>) Facet of Physical Vapor Transport-Grown 4H-SiC Crystals
title_sort	undulated step structure on the (000<inline-formula><math display="inline"><semantics><mrow><mover><mn>1</mn><mo stretchy="false">¯</mo></mover></mrow></semantics></math></inline-formula>) facet of physical vapor transport-grown 4h-sic crystals
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/d235f1cc401248b1bd624ac4a956d0bb
work_keys_str_mv	AT hiroakishinya undulatedstepstructureonthe000inlineformulamathdisplayinlinesemanticsmrowmovermn1mnmostretchyfalsemomovermrowsemanticsmathinlineformulafacetofphysicalvaportransportgrown4hsiccrystals AT masatakanakano undulatedstepstructureonthe000inlineformulamathdisplayinlinesemanticsmrowmovermn1mnmostretchyfalsemomovermrowsemanticsmathinlineformulafacetofphysicalvaportransportgrown4hsiccrystals AT noboruohtani undulatedstepstructureonthe000inlineformulamathdisplayinlinesemanticsmrowmovermn1mnmostretchyfalsemomovermrowsemanticsmathinlineformulafacetofphysicalvaportransportgrown4hsiccrystals
_version_	1718411467345100800

Undulated Step Structure on the (000<inline-formula><math display="inline"><semantics><mrow><mover><mn>1</mn><mo stretchy="false">¯</mo></mover></mrow></semantics></math></inline-formula>) Facet of Physical Vapor Transport-Grown 4H-SiC Crystals

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