Photovoltaic Characteristics of GaSe/MoSe2 Heterojunction Devices

Abstract The two-dimensional materials have the thickness of an atomic layer level and are expected as alternative materials for future electronics and optoelectronics due to their specific properties. Especially recently, transition metal monochalcogenides and dichalcogenides have attracted attenti...

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Autores principales:	Ryousuke Ishikawa, Pil Ju Ko, Ryoutaro Anzo, Chang Lim Woo, Gilgu Oh, Nozomu Tsuboi
Formato:	article
Lenguaje:	EN
Publicado:	SpringerOpen 2021
Materias:	2D materials Heterojunction Solar cell GaSe MoSe2 Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/d2ad6854ca5349088aa7358d7f76bc89
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spelling	oai:doaj.org-article:d2ad6854ca5349088aa7358d7f76bc892021-12-05T12:23:54ZPhotovoltaic Characteristics of GaSe/MoSe2 Heterojunction Devices10.1186/s11671-021-03630-y1556-276Xhttps://doaj.org/article/d2ad6854ca5349088aa7358d7f76bc892021-11-01T00:00:00Zhttps://doi.org/10.1186/s11671-021-03630-yhttps://doaj.org/toc/1556-276XAbstract The two-dimensional materials have the thickness of an atomic layer level and are expected as alternative materials for future electronics and optoelectronics due to their specific properties. Especially recently, transition metal monochalcogenides and dichalcogenides have attracted attention. Since these materials have a band gap unlike graphene and exhibit a semiconductor property even in a single layer, application to a new flexible optoelectronics is expected. In this study, the photovoltaic characteristics of a GaSe/MoSe2 heterojunction device using two-dimensional semiconductors, p-type GaSe and n-type MoSe2, were investigated. The heterojunction device was prepared by transferring GaSe and MoSe2 onto the substrate which the titanium electrodes were fabricated through a mechanical peeling method. The current–voltage characteristics of the GaSe/MoSe2 heterojunction device were measured in a dark condition and under light irradiation using a solar simulator. The irradiation light intensity was changed from 0.5 to 1.5 sun. It was found that when the illuminance was increased in this illuminance range, both the short-circuit current and the open-circuit voltage increased. The open-circuit voltage and the energy conversion efficiency were 0.41 V and 0.46% under 1.5 sun condition, respectively.Ryousuke IshikawaPil Ju KoRyoutaro AnzoChang Lim WooGilgu OhNozomu TsuboiSpringerOpenarticle2D materialsHeterojunctionSolar cellGaSeMoSe2Materials of engineering and construction. Mechanics of materialsTA401-492ENNanoscale Research Letters, Vol 16, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	2D materials Heterojunction Solar cell GaSe MoSe2 Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	2D materials Heterojunction Solar cell GaSe MoSe2 Materials of engineering and construction. Mechanics of materials TA401-492 Ryousuke Ishikawa Pil Ju Ko Ryoutaro Anzo Chang Lim Woo Gilgu Oh Nozomu Tsuboi Photovoltaic Characteristics of GaSe/MoSe2 Heterojunction Devices
description	Abstract The two-dimensional materials have the thickness of an atomic layer level and are expected as alternative materials for future electronics and optoelectronics due to their specific properties. Especially recently, transition metal monochalcogenides and dichalcogenides have attracted attention. Since these materials have a band gap unlike graphene and exhibit a semiconductor property even in a single layer, application to a new flexible optoelectronics is expected. In this study, the photovoltaic characteristics of a GaSe/MoSe2 heterojunction device using two-dimensional semiconductors, p-type GaSe and n-type MoSe2, were investigated. The heterojunction device was prepared by transferring GaSe and MoSe2 onto the substrate which the titanium electrodes were fabricated through a mechanical peeling method. The current–voltage characteristics of the GaSe/MoSe2 heterojunction device were measured in a dark condition and under light irradiation using a solar simulator. The irradiation light intensity was changed from 0.5 to 1.5 sun. It was found that when the illuminance was increased in this illuminance range, both the short-circuit current and the open-circuit voltage increased. The open-circuit voltage and the energy conversion efficiency were 0.41 V and 0.46% under 1.5 sun condition, respectively.
format	article
author	Ryousuke Ishikawa Pil Ju Ko Ryoutaro Anzo Chang Lim Woo Gilgu Oh Nozomu Tsuboi
author_facet	Ryousuke Ishikawa Pil Ju Ko Ryoutaro Anzo Chang Lim Woo Gilgu Oh Nozomu Tsuboi
author_sort	Ryousuke Ishikawa
title	Photovoltaic Characteristics of GaSe/MoSe2 Heterojunction Devices
title_short	Photovoltaic Characteristics of GaSe/MoSe2 Heterojunction Devices
title_full	Photovoltaic Characteristics of GaSe/MoSe2 Heterojunction Devices
title_fullStr	Photovoltaic Characteristics of GaSe/MoSe2 Heterojunction Devices
title_full_unstemmed	Photovoltaic Characteristics of GaSe/MoSe2 Heterojunction Devices
title_sort	photovoltaic characteristics of gase/mose2 heterojunction devices
publisher	SpringerOpen
publishDate	2021
url	https://doaj.org/article/d2ad6854ca5349088aa7358d7f76bc89
work_keys_str_mv	AT ryousukeishikawa photovoltaiccharacteristicsofgasemose2heterojunctiondevices AT piljuko photovoltaiccharacteristicsofgasemose2heterojunctiondevices AT ryoutaroanzo photovoltaiccharacteristicsofgasemose2heterojunctiondevices AT changlimwoo photovoltaiccharacteristicsofgasemose2heterojunctiondevices AT gilguoh photovoltaiccharacteristicsofgasemose2heterojunctiondevices AT nozomutsuboi photovoltaiccharacteristicsofgasemose2heterojunctiondevices
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Photovoltaic Characteristics of GaSe/MoSe2 Heterojunction Devices

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