Photovoltaic Characteristics of GaSe/MoSe2 Heterojunction Devices
Abstract The two-dimensional materials have the thickness of an atomic layer level and are expected as alternative materials for future electronics and optoelectronics due to their specific properties. Especially recently, transition metal monochalcogenides and dichalcogenides have attracted attenti...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
SpringerOpen
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/d2ad6854ca5349088aa7358d7f76bc89 |
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