Huge magnetoresistance in topological insulator spin-valves at room temperature

Abstract Topological insulators (TI) have extremely high potential in spintronic applications. Here, a topological insulators thin-film (TITF) spin valve with the use of the segment gate-controlled potential exhibits a huge magnetoresistance (MR) value higher than 1000% at room temperature which is...

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Autores principales:	Peng Tseng, Jyun-Wei Chen, Wen-Jeng Hsueh
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/d32d8bf1484641cc9abd4f0fccf6ae94
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spelling	oai:doaj.org-article:d32d8bf1484641cc9abd4f0fccf6ae942021-12-02T18:24:54ZHuge magnetoresistance in topological insulator spin-valves at room temperature10.1038/s41598-021-91242-y2045-2322https://doaj.org/article/d32d8bf1484641cc9abd4f0fccf6ae942021-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-91242-yhttps://doaj.org/toc/2045-2322Abstract Topological insulators (TI) have extremely high potential in spintronic applications. Here, a topological insulators thin-film (TITF) spin valve with the use of the segment gate-controlled potential exhibits a huge magnetoresistance (MR) value higher than 1000% at room temperature which is more than 50 times the MR of typical topological insulators (TI) spin-valves. A high spin-polarized current is provided by the band structure generated by the tunable segment potential. The results reveal a very large resistance difference between the parallel and antiparallel configurations. The MR effect is strongly influenced by the thin-film thickness, the gate potential, the gate size, and the distribution. The proposed results will help to not only improve the room-temperature performance of the spin-valves but also enhance the applications of magnetic memories and spintronic devices.Peng TsengJyun-Wei ChenWen-Jeng HsuehNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Peng Tseng Jyun-Wei Chen Wen-Jeng Hsueh Huge magnetoresistance in topological insulator spin-valves at room temperature
description	Abstract Topological insulators (TI) have extremely high potential in spintronic applications. Here, a topological insulators thin-film (TITF) spin valve with the use of the segment gate-controlled potential exhibits a huge magnetoresistance (MR) value higher than 1000% at room temperature which is more than 50 times the MR of typical topological insulators (TI) spin-valves. A high spin-polarized current is provided by the band structure generated by the tunable segment potential. The results reveal a very large resistance difference between the parallel and antiparallel configurations. The MR effect is strongly influenced by the thin-film thickness, the gate potential, the gate size, and the distribution. The proposed results will help to not only improve the room-temperature performance of the spin-valves but also enhance the applications of magnetic memories and spintronic devices.
format	article
author	Peng Tseng Jyun-Wei Chen Wen-Jeng Hsueh
author_facet	Peng Tseng Jyun-Wei Chen Wen-Jeng Hsueh
author_sort	Peng Tseng
title	Huge magnetoresistance in topological insulator spin-valves at room temperature
title_short	Huge magnetoresistance in topological insulator spin-valves at room temperature
title_full	Huge magnetoresistance in topological insulator spin-valves at room temperature
title_fullStr	Huge magnetoresistance in topological insulator spin-valves at room temperature
title_full_unstemmed	Huge magnetoresistance in topological insulator spin-valves at room temperature
title_sort	huge magnetoresistance in topological insulator spin-valves at room temperature
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/d32d8bf1484641cc9abd4f0fccf6ae94
work_keys_str_mv	AT pengtseng hugemagnetoresistanceintopologicalinsulatorspinvalvesatroomtemperature AT jyunweichen hugemagnetoresistanceintopologicalinsulatorspinvalvesatroomtemperature AT wenjenghsueh hugemagnetoresistanceintopologicalinsulatorspinvalvesatroomtemperature
_version_	1718378126616035328

Huge magnetoresistance in topological insulator spin-valves at room temperature

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