Off-Stoichiometry Driven Carrier Density Variation at the Interface of LaAlO3/SrTiO3
Abstract The interface between LaAlO3 (LAO) and SrTiO3 (STO) has attracted enormous interests due to its rich physical phenomena, such as metallic nature, magnetism and superconductivity. In this work, we report our experimental investigations on the influence of the LAO stoichiometry to the metalli...
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2017
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oai:doaj.org-article:d33b43493c414e22b4b9b08fcf29b57c2021-12-02T12:32:34ZOff-Stoichiometry Driven Carrier Density Variation at the Interface of LaAlO3/SrTiO310.1038/s41598-017-02039-x2045-2322https://doaj.org/article/d33b43493c414e22b4b9b08fcf29b57c2017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-02039-xhttps://doaj.org/toc/2045-2322Abstract The interface between LaAlO3 (LAO) and SrTiO3 (STO) has attracted enormous interests due to its rich physical phenomena, such as metallic nature, magnetism and superconductivity. In this work, we report our experimental investigations on the influence of the LAO stoichiometry to the metallic interface. Taking advantage of the oxide molecular beam epitaxy (MBE) technique, a series of high quality LAO films with different nominal La/Al ratios and LAO thicknesses were grown on the TiO2-terminated STO substrates, where systematic variations of the LAO lattice constant and transport property were observed. In particular, the sheet density can be largely reduced by nearly an order of magnitude with merely about 20% increase in the nominal La/Al ratio. Our finding provides an effective method on tuning the electron density of the two-dimensional electron liquid (2DEL) at the LAO/STO interface.Ming-Shiu TsaiChi-Sheng LiShih-Ting GuoMing-Yuan SongAkhilesh Kr. SinghWei-Li LeeM.-W. ChuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017) |
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Medicine R Science Q Ming-Shiu Tsai Chi-Sheng Li Shih-Ting Guo Ming-Yuan Song Akhilesh Kr. Singh Wei-Li Lee M.-W. Chu Off-Stoichiometry Driven Carrier Density Variation at the Interface of LaAlO3/SrTiO3 |
description |
Abstract The interface between LaAlO3 (LAO) and SrTiO3 (STO) has attracted enormous interests due to its rich physical phenomena, such as metallic nature, magnetism and superconductivity. In this work, we report our experimental investigations on the influence of the LAO stoichiometry to the metallic interface. Taking advantage of the oxide molecular beam epitaxy (MBE) technique, a series of high quality LAO films with different nominal La/Al ratios and LAO thicknesses were grown on the TiO2-terminated STO substrates, where systematic variations of the LAO lattice constant and transport property were observed. In particular, the sheet density can be largely reduced by nearly an order of magnitude with merely about 20% increase in the nominal La/Al ratio. Our finding provides an effective method on tuning the electron density of the two-dimensional electron liquid (2DEL) at the LAO/STO interface. |
format |
article |
author |
Ming-Shiu Tsai Chi-Sheng Li Shih-Ting Guo Ming-Yuan Song Akhilesh Kr. Singh Wei-Li Lee M.-W. Chu |
author_facet |
Ming-Shiu Tsai Chi-Sheng Li Shih-Ting Guo Ming-Yuan Song Akhilesh Kr. Singh Wei-Li Lee M.-W. Chu |
author_sort |
Ming-Shiu Tsai |
title |
Off-Stoichiometry Driven Carrier Density Variation at the Interface of LaAlO3/SrTiO3 |
title_short |
Off-Stoichiometry Driven Carrier Density Variation at the Interface of LaAlO3/SrTiO3 |
title_full |
Off-Stoichiometry Driven Carrier Density Variation at the Interface of LaAlO3/SrTiO3 |
title_fullStr |
Off-Stoichiometry Driven Carrier Density Variation at the Interface of LaAlO3/SrTiO3 |
title_full_unstemmed |
Off-Stoichiometry Driven Carrier Density Variation at the Interface of LaAlO3/SrTiO3 |
title_sort |
off-stoichiometry driven carrier density variation at the interface of laalo3/srtio3 |
publisher |
Nature Portfolio |
publishDate |
2017 |
url |
https://doaj.org/article/d33b43493c414e22b4b9b08fcf29b57c |
work_keys_str_mv |
AT mingshiutsai offstoichiometrydrivencarrierdensityvariationattheinterfaceoflaalo3srtio3 AT chishengli offstoichiometrydrivencarrierdensityvariationattheinterfaceoflaalo3srtio3 AT shihtingguo offstoichiometrydrivencarrierdensityvariationattheinterfaceoflaalo3srtio3 AT mingyuansong offstoichiometrydrivencarrierdensityvariationattheinterfaceoflaalo3srtio3 AT akhileshkrsingh offstoichiometrydrivencarrierdensityvariationattheinterfaceoflaalo3srtio3 AT weililee offstoichiometrydrivencarrierdensityvariationattheinterfaceoflaalo3srtio3 AT mwchu offstoichiometrydrivencarrierdensityvariationattheinterfaceoflaalo3srtio3 |
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1718394064413392896 |