Strong magnetophonon oscillations in extra-large graphene

Increasing the size of mesoscopic devices based on van der Waals heterostructures triggers additional quantum effects. Here, the authors observe distinct magnetoresistance oscillations in graphene/h-BN Hall bars only in devices wider than 10 μm due to resonant scattering of charge carriers by transv...

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Autores principales:	P. Kumaravadivel, M. T. Greenaway, D. Perello, A. Berdyugin, J. Birkbeck, J. Wengraf, S. Liu, J. H. Edgar, A. K. Geim, L. Eaves, R. Krishna Kumar
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/d35592b5e0114ffda4bc34acc2bfd76a
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spelling	oai:doaj.org-article:d35592b5e0114ffda4bc34acc2bfd76a2021-12-02T15:35:15ZStrong magnetophonon oscillations in extra-large graphene10.1038/s41467-019-11379-32041-1723https://doaj.org/article/d35592b5e0114ffda4bc34acc2bfd76a2019-07-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-11379-3https://doaj.org/toc/2041-1723Increasing the size of mesoscopic devices based on van der Waals heterostructures triggers additional quantum effects. Here, the authors observe distinct magnetoresistance oscillations in graphene/h-BN Hall bars only in devices wider than 10 μm due to resonant scattering of charge carriers by transverse acoustic phonons in graphene.P. KumaravadivelM. T. GreenawayD. PerelloA. BerdyuginJ. BirkbeckJ. WengrafS. LiuJ. H. EdgarA. K. GeimL. EavesR. Krishna KumarNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-6 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q P. Kumaravadivel M. T. Greenaway D. Perello A. Berdyugin J. Birkbeck J. Wengraf S. Liu J. H. Edgar A. K. Geim L. Eaves R. Krishna Kumar Strong magnetophonon oscillations in extra-large graphene
description	Increasing the size of mesoscopic devices based on van der Waals heterostructures triggers additional quantum effects. Here, the authors observe distinct magnetoresistance oscillations in graphene/h-BN Hall bars only in devices wider than 10 μm due to resonant scattering of charge carriers by transverse acoustic phonons in graphene.
format	article
author	P. Kumaravadivel M. T. Greenaway D. Perello A. Berdyugin J. Birkbeck J. Wengraf S. Liu J. H. Edgar A. K. Geim L. Eaves R. Krishna Kumar
author_facet	P. Kumaravadivel M. T. Greenaway D. Perello A. Berdyugin J. Birkbeck J. Wengraf S. Liu J. H. Edgar A. K. Geim L. Eaves R. Krishna Kumar
author_sort	P. Kumaravadivel
title	Strong magnetophonon oscillations in extra-large graphene
title_short	Strong magnetophonon oscillations in extra-large graphene
title_full	Strong magnetophonon oscillations in extra-large graphene
title_fullStr	Strong magnetophonon oscillations in extra-large graphene
title_full_unstemmed	Strong magnetophonon oscillations in extra-large graphene
title_sort	strong magnetophonon oscillations in extra-large graphene
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/d35592b5e0114ffda4bc34acc2bfd76a
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Strong magnetophonon oscillations in extra-large graphene

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