Intense luminescence from porous ZnSe layers

We report on the possibility to prepare ZnSe porous layers with different degrees of porosity by means of electrochemical methods. The prepared porous structures were characterized using scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL) techniques. The PL of t...

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Autores principales:	Monaico, Eduard, Tighineanu, Ion, Ursachi, Veaceslav, Boyd, Robert W., Ubrieta, A, Fernandez, P, Piqueras, Javier
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2007
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/d355e6580f8042aab7219db9e8283878
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spelling	oai:doaj.org-article:d355e6580f8042aab7219db9e82838782021-11-21T12:07:52ZIntense luminescence from porous ZnSe layers 2537-63651810-648Xhttps://doaj.org/article/d355e6580f8042aab7219db9e82838782007-05-01T00:00:00Zhttps://mjps.nanotech.md/archive/2007/article/3700https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365We report on the possibility to prepare ZnSe porous layers with different degrees of porosity by means of electrochemical methods. The prepared porous structures were characterized using scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL) techniques. The PL of the as-grown material and porous layers measured at low temperatures (10 K) was found to be dominated by an emission band at 2.796 eV as well as a band at 2.700 eV with several phonon replicas. The analysis of the dependence of these bands upon the excitation power density and temperature suggests that free-to-bound and respectively donor-acceptor electron transitions are responsible for the emission bands involved. The comparison of SEM and CL images taken from the same porous regions demonstrated that cathodoluminescence intensity from layers with small characteristic sizes of the porous entities (around 50 nm) is weaker than that inherent in bulk material, while porous layers with the pore diameter of around 500 nm exhibit much stronger luminescence. Monaico, EduardTighineanu, IonUrsachi, VeaceslavBoyd, Robert W.Ubrieta, AFernandez, PPiqueras, JavierD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 6, Iss 2, Pp 129-134 (2007)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Monaico, Eduard Tighineanu, Ion Ursachi, Veaceslav Boyd, Robert W. Ubrieta, A Fernandez, P Piqueras, Javier Intense luminescence from porous ZnSe layers
description	We report on the possibility to prepare ZnSe porous layers with different degrees of porosity by means of electrochemical methods. The prepared porous structures were characterized using scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL) techniques. The PL of the as-grown material and porous layers measured at low temperatures (10 K) was found to be dominated by an emission band at 2.796 eV as well as a band at 2.700 eV with several phonon replicas. The analysis of the dependence of these bands upon the excitation power density and temperature suggests that free-to-bound and respectively donor-acceptor electron transitions are responsible for the emission bands involved. The comparison of SEM and CL images taken from the same porous regions demonstrated that cathodoluminescence intensity from layers with small characteristic sizes of the porous entities (around 50 nm) is weaker than that inherent in bulk material, while porous layers with the pore diameter of around 500 nm exhibit much stronger luminescence.
format	article
author	Monaico, Eduard Tighineanu, Ion Ursachi, Veaceslav Boyd, Robert W. Ubrieta, A Fernandez, P Piqueras, Javier
author_facet	Monaico, Eduard Tighineanu, Ion Ursachi, Veaceslav Boyd, Robert W. Ubrieta, A Fernandez, P Piqueras, Javier
author_sort	Monaico, Eduard
title	Intense luminescence from porous ZnSe layers
title_short	Intense luminescence from porous ZnSe layers
title_full	Intense luminescence from porous ZnSe layers
title_fullStr	Intense luminescence from porous ZnSe layers
title_full_unstemmed	Intense luminescence from porous ZnSe layers
title_sort	intense luminescence from porous znse layers
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2007
url	https://doaj.org/article/d355e6580f8042aab7219db9e8283878
work_keys_str_mv	AT monaicoeduard intenseluminescencefromporousznselayers AT tighineanuion intenseluminescencefromporousznselayers AT ursachiveaceslav intenseluminescencefromporousznselayers AT boydrobertw intenseluminescencefromporousznselayers AT ubrietaa intenseluminescencefromporousznselayers AT fernandezp intenseluminescencefromporousznselayers AT piquerasjavier intenseluminescencefromporousznselayers
_version_	1718419213057523712

Intense luminescence from porous ZnSe layers

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