Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application

Abstract Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase c...

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Autores principales:	Xin Chen, Yonghui Zheng, Min Zhu, Kun Ren, Yong Wang, Tao Li, Guangyu Liu, Tianqi Guo, Lei Wu, Xianqiang Liu, Yan Cheng, Zhitang Song
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/d3ba0352db4c4719a51af35a2ca3119c
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spelling	oai:doaj.org-article:d3ba0352db4c4719a51af35a2ca3119c2021-12-02T16:08:26ZScandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application10.1038/s41598-018-25215-z2045-2322https://doaj.org/article/d3ba0352db4c4719a51af35a2ca3119c2018-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-25215-zhttps://doaj.org/toc/2045-2322Abstract Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change materials. Here, Scandium (Sc) has been found it is helpful to get high-speed and good stability after doping in Sb2Te alloy. Sc0.1Sb2Te based PCRAM cell can achieve reversible switching by applying even 6 ns voltage pulse experimentally. And, Sc doping not only promotes amorphous stability but also improves the endurance ability comparing with pure Sb2Te alloy. Moreover, according to DFT calculations, strong Sc-Te bonds lead to the rigidity of Sc centered octahedrons, which may act as crystallization precursors in recrystallization process to boost the set speed.Xin ChenYonghui ZhengMin ZhuKun RenYong WangTao LiGuangyu LiuTianqi GuoLei WuXianqiang LiuYan ChengZhitang SongNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-6 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Xin Chen Yonghui Zheng Min Zhu Kun Ren Yong Wang Tao Li Guangyu Liu Tianqi Guo Lei Wu Xianqiang Liu Yan Cheng Zhitang Song Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application
description	Abstract Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change materials. Here, Scandium (Sc) has been found it is helpful to get high-speed and good stability after doping in Sb2Te alloy. Sc0.1Sb2Te based PCRAM cell can achieve reversible switching by applying even 6 ns voltage pulse experimentally. And, Sc doping not only promotes amorphous stability but also improves the endurance ability comparing with pure Sb2Te alloy. Moreover, according to DFT calculations, strong Sc-Te bonds lead to the rigidity of Sc centered octahedrons, which may act as crystallization precursors in recrystallization process to boost the set speed.
format	article
author	Xin Chen Yonghui Zheng Min Zhu Kun Ren Yong Wang Tao Li Guangyu Liu Tianqi Guo Lei Wu Xianqiang Liu Yan Cheng Zhitang Song
author_facet	Xin Chen Yonghui Zheng Min Zhu Kun Ren Yong Wang Tao Li Guangyu Liu Tianqi Guo Lei Wu Xianqiang Liu Yan Cheng Zhitang Song
author_sort	Xin Chen
title	Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application
title_short	Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application
title_full	Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application
title_fullStr	Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application
title_full_unstemmed	Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application
title_sort	scandium doping brings speed improvement in sb2te alloy for phase change random access memory application
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/d3ba0352db4c4719a51af35a2ca3119c
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Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application

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