Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application

Abstract Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase c...

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Autores principales: Xin Chen, Yonghui Zheng, Min Zhu, Kun Ren, Yong Wang, Tao Li, Guangyu Liu, Tianqi Guo, Lei Wu, Xianqiang Liu, Yan Cheng, Zhitang Song
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/d3ba0352db4c4719a51af35a2ca3119c
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