Effect of generation rate on transient photoconductivity of semi-insulating 4H-SiC

Abstract The effect of generation rate on transient photoconductivity of semi-insulating (SI) 4H-SiC is discussed. The rate of generation of electron–hole pairs is dependent on the number of photons incident on the sample material and its absorption and reflection coefficients. The number of photons...

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Autores principales:	Marek Suproniuk, Mariusz Wierzbowski, Piotr Paziewski
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/d3c40bde7cf246899ae8837f04e20322
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id	oai:doaj.org-article:d3c40bde7cf246899ae8837f04e20322
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spelling	oai:doaj.org-article:d3c40bde7cf246899ae8837f04e203222021-12-02T15:32:59ZEffect of generation rate on transient photoconductivity of semi-insulating 4H-SiC10.1038/s41598-020-68898-z2045-2322https://doaj.org/article/d3c40bde7cf246899ae8837f04e203222020-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-68898-zhttps://doaj.org/toc/2045-2322Abstract The effect of generation rate on transient photoconductivity of semi-insulating (SI) 4H-SiC is discussed. The rate of generation of electron–hole pairs is dependent on the number of photons incident on the sample material and its absorption and reflection coefficients. The number of photons and their energy is dependent on the radiation power and wavelength of the light source illuminating the material. The results of research, obtained with a specialized simulator, present the influence of changes in the filling of individual defect centres’ levels on changes in conductivity of the test material observed after switching on the photoexcitation. For the purpose of simulations, presented is a versatile model of semiconductor material. It encompasses six point defects that appear in SI 4H-SiC materials the most often. Those defect centres correspond to Z1/2 recombination centre, deep electron and deep hole traps, nitrogen-related shallow donors of two kinds and a boron-related shallow acceptor. The simulation results can be used to design and determine properties of photoconductive switches.Marek SuproniukMariusz WierzbowskiPiotr PaziewskiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-14 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Marek Suproniuk Mariusz Wierzbowski Piotr Paziewski Effect of generation rate on transient photoconductivity of semi-insulating 4H-SiC
description	Abstract The effect of generation rate on transient photoconductivity of semi-insulating (SI) 4H-SiC is discussed. The rate of generation of electron–hole pairs is dependent on the number of photons incident on the sample material and its absorption and reflection coefficients. The number of photons and their energy is dependent on the radiation power and wavelength of the light source illuminating the material. The results of research, obtained with a specialized simulator, present the influence of changes in the filling of individual defect centres’ levels on changes in conductivity of the test material observed after switching on the photoexcitation. For the purpose of simulations, presented is a versatile model of semiconductor material. It encompasses six point defects that appear in SI 4H-SiC materials the most often. Those defect centres correspond to Z1/2 recombination centre, deep electron and deep hole traps, nitrogen-related shallow donors of two kinds and a boron-related shallow acceptor. The simulation results can be used to design and determine properties of photoconductive switches.
format	article
author	Marek Suproniuk Mariusz Wierzbowski Piotr Paziewski
author_facet	Marek Suproniuk Mariusz Wierzbowski Piotr Paziewski
author_sort	Marek Suproniuk
title	Effect of generation rate on transient photoconductivity of semi-insulating 4H-SiC
title_short	Effect of generation rate on transient photoconductivity of semi-insulating 4H-SiC
title_full	Effect of generation rate on transient photoconductivity of semi-insulating 4H-SiC
title_fullStr	Effect of generation rate on transient photoconductivity of semi-insulating 4H-SiC
title_full_unstemmed	Effect of generation rate on transient photoconductivity of semi-insulating 4H-SiC
title_sort	effect of generation rate on transient photoconductivity of semi-insulating 4h-sic
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/d3c40bde7cf246899ae8837f04e20322
work_keys_str_mv	AT mareksuproniuk effectofgenerationrateontransientphotoconductivityofsemiinsulating4hsic AT mariuszwierzbowski effectofgenerationrateontransientphotoconductivityofsemiinsulating4hsic AT piotrpaziewski effectofgenerationrateontransientphotoconductivityofsemiinsulating4hsic
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Effect of generation rate on transient photoconductivity of semi-insulating 4H-SiC

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