Effect of generation rate on transient photoconductivity of semi-insulating 4H-SiC
Abstract The effect of generation rate on transient photoconductivity of semi-insulating (SI) 4H-SiC is discussed. The rate of generation of electron–hole pairs is dependent on the number of photons incident on the sample material and its absorption and reflection coefficients. The number of photons...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/d3c40bde7cf246899ae8837f04e20322 |
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