A modeling study on utilizing low temperature sprayed In2S3 as the buffer layer of CuBaSn(S, Se) solar cells

Abstract This study represents the investigation of In2S3 thin films as an electron transport layer in the CuBaSn(S, Se)-CBT(S, Se) solar cells, which have been deposited using the Chemical Spray Pyrolysis method. For studying the electrical properties of films such as conduction and valence band, c...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Maryam Hashemi, Mehran Minbashi, Seyed Mohammad Bagher Ghorashi, Arash Ghobadi
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
R
Q
Acceso en línea:https://doaj.org/article/d3d70713cc424a99a2add69b6af775e8
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:d3d70713cc424a99a2add69b6af775e8
record_format dspace
spelling oai:doaj.org-article:d3d70713cc424a99a2add69b6af775e82021-12-02T18:01:40ZA modeling study on utilizing low temperature sprayed In2S3 as the buffer layer of CuBaSn(S, Se) solar cells10.1038/s41598-021-99012-62045-2322https://doaj.org/article/d3d70713cc424a99a2add69b6af775e82021-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-99012-6https://doaj.org/toc/2045-2322Abstract This study represents the investigation of In2S3 thin films as an electron transport layer in the CuBaSn(S, Se)-CBT(S, Se) solar cells, which have been deposited using the Chemical Spray Pyrolysis method. For studying the electrical properties of films such as conduction and valence band, carrier densities, Fermi level, flat band potential, and semiconductor type, the Mott–Schottky analysis has been used. UV–VIS, XRD, and FESEM have been applied to investigate the optical properties of the layers and the layer’s morphologies. The experimental CBT(S, Se) solar cell has been simulated and validated as the next step. After that, the In2S3 layer has been used as the electron transport layer. The results represent that the In2S3 layer is a suitable substitution for toxic CdS. Finally, the In2S3 properties are varied in reasonable ranges, which means different electron transport layers are screened.Maryam HashemiMehran MinbashiSeyed Mohammad Bagher GhorashiArash GhobadiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Maryam Hashemi
Mehran Minbashi
Seyed Mohammad Bagher Ghorashi
Arash Ghobadi
A modeling study on utilizing low temperature sprayed In2S3 as the buffer layer of CuBaSn(S, Se) solar cells
description Abstract This study represents the investigation of In2S3 thin films as an electron transport layer in the CuBaSn(S, Se)-CBT(S, Se) solar cells, which have been deposited using the Chemical Spray Pyrolysis method. For studying the electrical properties of films such as conduction and valence band, carrier densities, Fermi level, flat band potential, and semiconductor type, the Mott–Schottky analysis has been used. UV–VIS, XRD, and FESEM have been applied to investigate the optical properties of the layers and the layer’s morphologies. The experimental CBT(S, Se) solar cell has been simulated and validated as the next step. After that, the In2S3 layer has been used as the electron transport layer. The results represent that the In2S3 layer is a suitable substitution for toxic CdS. Finally, the In2S3 properties are varied in reasonable ranges, which means different electron transport layers are screened.
format article
author Maryam Hashemi
Mehran Minbashi
Seyed Mohammad Bagher Ghorashi
Arash Ghobadi
author_facet Maryam Hashemi
Mehran Minbashi
Seyed Mohammad Bagher Ghorashi
Arash Ghobadi
author_sort Maryam Hashemi
title A modeling study on utilizing low temperature sprayed In2S3 as the buffer layer of CuBaSn(S, Se) solar cells
title_short A modeling study on utilizing low temperature sprayed In2S3 as the buffer layer of CuBaSn(S, Se) solar cells
title_full A modeling study on utilizing low temperature sprayed In2S3 as the buffer layer of CuBaSn(S, Se) solar cells
title_fullStr A modeling study on utilizing low temperature sprayed In2S3 as the buffer layer of CuBaSn(S, Se) solar cells
title_full_unstemmed A modeling study on utilizing low temperature sprayed In2S3 as the buffer layer of CuBaSn(S, Se) solar cells
title_sort modeling study on utilizing low temperature sprayed in2s3 as the buffer layer of cubasn(s, se) solar cells
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/d3d70713cc424a99a2add69b6af775e8
work_keys_str_mv AT maryamhashemi amodelingstudyonutilizinglowtemperaturesprayedin2s3asthebufferlayerofcubasnssesolarcells
AT mehranminbashi amodelingstudyonutilizinglowtemperaturesprayedin2s3asthebufferlayerofcubasnssesolarcells
AT seyedmohammadbagherghorashi amodelingstudyonutilizinglowtemperaturesprayedin2s3asthebufferlayerofcubasnssesolarcells
AT arashghobadi amodelingstudyonutilizinglowtemperaturesprayedin2s3asthebufferlayerofcubasnssesolarcells
AT maryamhashemi modelingstudyonutilizinglowtemperaturesprayedin2s3asthebufferlayerofcubasnssesolarcells
AT mehranminbashi modelingstudyonutilizinglowtemperaturesprayedin2s3asthebufferlayerofcubasnssesolarcells
AT seyedmohammadbagherghorashi modelingstudyonutilizinglowtemperaturesprayedin2s3asthebufferlayerofcubasnssesolarcells
AT arashghobadi modelingstudyonutilizinglowtemperaturesprayedin2s3asthebufferlayerofcubasnssesolarcells
_version_ 1718378956732760064