Electron–hole superfluidity in strained Si/Ge type II heterojunctions

Abstract Excitons are promising candidates for generating superfluidity and Bose–Einstein condensation (BEC) in solid-state devices, but an enabling material platform with in-built band structure advantages and scaling compatibility with industrial semiconductor technology is lacking. Here we predic...

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Autores principales:	Sara Conti, Samira Saberi-Pouya, Andrea Perali, Michele Virgilio, François M. Peeters, Alexander R. Hamilton, Giordano Scappucci, David Neilson
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197
Acceso en línea:	https://doaj.org/article/d40538184b10468b9e28c88871f91458
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spelling	oai:doaj.org-article:d40538184b10468b9e28c88871f914582021-12-02T15:27:12ZElectron–hole superfluidity in strained Si/Ge type II heterojunctions10.1038/s41535-021-00344-32397-4648https://doaj.org/article/d40538184b10468b9e28c88871f914582021-04-01T00:00:00Zhttps://doi.org/10.1038/s41535-021-00344-3https://doaj.org/toc/2397-4648Abstract Excitons are promising candidates for generating superfluidity and Bose–Einstein condensation (BEC) in solid-state devices, but an enabling material platform with in-built band structure advantages and scaling compatibility with industrial semiconductor technology is lacking. Here we predict that spatially indirect excitons in a lattice-matched strained Si/Ge bilayer embedded into a germanium-rich SiGe crystal would lead to observable mass-imbalanced electron–hole superfluidity and BEC. Holes would be confined in a compressively strained Ge quantum well and electrons in a lattice-matched tensile strained Si quantum well. We envision a device architecture that does not require an insulating barrier at the Si/Ge interface, since this interface offers a type II band alignment. Thus the electrons and holes can be kept very close but strictly separate, strengthening the electron–hole pairing attraction while preventing fast electron–hole recombination. The band alignment also allows a one-step procedure for making independent contacts to the electron and hole layers, overcoming a significant obstacle to device fabrication. We predict superfluidity at experimentally accessible temperatures of a few Kelvin and carrier densities up to ~6 × 1010 cm−2, while the large imbalance of the electron and hole effective masses can lead to exotic superfluid phases.Sara ContiSamira Saberi-PouyaAndrea PeraliMichele VirgilioFrançois M. PeetersAlexander R. HamiltonGiordano ScappucciDavid NeilsonNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492Atomic physics. Constitution and properties of matterQC170-197ENnpj Quantum Materials, Vol 6, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Atomic physics. Constitution and properties of matter QC170-197 Sara Conti Samira Saberi-Pouya Andrea Perali Michele Virgilio François M. Peeters Alexander R. Hamilton Giordano Scappucci David Neilson Electron–hole superfluidity in strained Si/Ge type II heterojunctions
description	Abstract Excitons are promising candidates for generating superfluidity and Bose–Einstein condensation (BEC) in solid-state devices, but an enabling material platform with in-built band structure advantages and scaling compatibility with industrial semiconductor technology is lacking. Here we predict that spatially indirect excitons in a lattice-matched strained Si/Ge bilayer embedded into a germanium-rich SiGe crystal would lead to observable mass-imbalanced electron–hole superfluidity and BEC. Holes would be confined in a compressively strained Ge quantum well and electrons in a lattice-matched tensile strained Si quantum well. We envision a device architecture that does not require an insulating barrier at the Si/Ge interface, since this interface offers a type II band alignment. Thus the electrons and holes can be kept very close but strictly separate, strengthening the electron–hole pairing attraction while preventing fast electron–hole recombination. The band alignment also allows a one-step procedure for making independent contacts to the electron and hole layers, overcoming a significant obstacle to device fabrication. We predict superfluidity at experimentally accessible temperatures of a few Kelvin and carrier densities up to ~6 × 1010 cm−2, while the large imbalance of the electron and hole effective masses can lead to exotic superfluid phases.
format	article
author	Sara Conti Samira Saberi-Pouya Andrea Perali Michele Virgilio François M. Peeters Alexander R. Hamilton Giordano Scappucci David Neilson
author_facet	Sara Conti Samira Saberi-Pouya Andrea Perali Michele Virgilio François M. Peeters Alexander R. Hamilton Giordano Scappucci David Neilson
author_sort	Sara Conti
title	Electron–hole superfluidity in strained Si/Ge type II heterojunctions
title_short	Electron–hole superfluidity in strained Si/Ge type II heterojunctions
title_full	Electron–hole superfluidity in strained Si/Ge type II heterojunctions
title_fullStr	Electron–hole superfluidity in strained Si/Ge type II heterojunctions
title_full_unstemmed	Electron–hole superfluidity in strained Si/Ge type II heterojunctions
title_sort	electron–hole superfluidity in strained si/ge type ii heterojunctions
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/d40538184b10468b9e28c88871f91458
work_keys_str_mv	AT saraconti electronholesuperfluidityinstrainedsigetypeiiheterojunctions AT samirasaberipouya electronholesuperfluidityinstrainedsigetypeiiheterojunctions AT andreaperali electronholesuperfluidityinstrainedsigetypeiiheterojunctions AT michelevirgilio electronholesuperfluidityinstrainedsigetypeiiheterojunctions AT francoismpeeters electronholesuperfluidityinstrainedsigetypeiiheterojunctions AT alexanderrhamilton electronholesuperfluidityinstrainedsigetypeiiheterojunctions AT giordanoscappucci electronholesuperfluidityinstrainedsigetypeiiheterojunctions AT davidneilson electronholesuperfluidityinstrainedsigetypeiiheterojunctions
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Electron–hole superfluidity in strained Si/Ge type II heterojunctions

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