Electric-field control of ferromagnetism through oxygen ion gating

Electric-field control of ferromagnetism through oxygen ion gating

It has been suggested that the magnetic properties of metal layers using reversible redox reactions could form the basis of memory devices but this requires fast electric control to be practical. Here the authors demonstrate this on sub-millisecond timescales in a metal–oxide heterostructure.

Saved in:
Bibliographic Details
Main Authors: Hao-Bo Li, Nianpeng Lu, Qinghua Zhang, Yujia Wang, Deqiang Feng, Tianzhe Chen, Shuzhen Yang, Zheng Duan, Zhuolu Li, Yujun Shi, Weichao Wang, Wei-Hua Wang, Kui Jin, Hui Liu, Jing Ma, Lin Gu, Cewen Nan, Pu Yu
Format: article
Language:EN
Published: Nature Portfolio 2017
Subjects:
Science
Q
Online Access:https://doaj.org/article/d452efc12aaf494e82e9ff231e8b94db
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:It has been suggested that the magnetic properties of metal layers using reversible redox reactions could form the basis of memory devices but this requires fast electric control to be practical. Here the authors demonstrate this on sub-millisecond timescales in a metal–oxide heterostructure.

Similar Items