Electric-field control of ferromagnetism through oxygen ion gating

It has been suggested that the magnetic properties of metal layers using reversible redox reactions could form the basis of memory devices but this requires fast electric control to be practical. Here the authors demonstrate this on sub-millisecond timescales in a metal–oxide heterostructure.

Enregistré dans:
Détails bibliographiques
Auteurs principaux: Hao-Bo Li, Nianpeng Lu, Qinghua Zhang, Yujia Wang, Deqiang Feng, Tianzhe Chen, Shuzhen Yang, Zheng Duan, Zhuolu Li, Yujun Shi, Weichao Wang, Wei-Hua Wang, Kui Jin, Hui Liu, Jing Ma, Lin Gu, Cewen Nan, Pu Yu
Format: article
Langue:EN
Publié: Nature Portfolio 2017
Sujets:
Q
Accès en ligne:https://doaj.org/article/d452efc12aaf494e82e9ff231e8b94db
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
Description
Résumé:It has been suggested that the magnetic properties of metal layers using reversible redox reactions could form the basis of memory devices but this requires fast electric control to be practical. Here the authors demonstrate this on sub-millisecond timescales in a metal–oxide heterostructure.