Electric-field control of ferromagnetism through oxygen ion gating

Electric-field control of ferromagnetism through oxygen ion gating

It has been suggested that the magnetic properties of metal layers using reversible redox reactions could form the basis of memory devices but this requires fast electric control to be practical. Here the authors demonstrate this on sub-millisecond timescales in a metal–oxide heterostructure.

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Autores principales: Hao-Bo Li, Nianpeng Lu, Qinghua Zhang, Yujia Wang, Deqiang Feng, Tianzhe Chen, Shuzhen Yang, Zheng Duan, Zhuolu Li, Yujun Shi, Weichao Wang, Wei-Hua Wang, Kui Jin, Hui Liu, Jing Ma, Lin Gu, Cewen Nan, Pu Yu
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Science
Q
Acceso en línea:https://doaj.org/article/d452efc12aaf494e82e9ff231e8b94db
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spelling oai:doaj.org-article:d452efc12aaf494e82e9ff231e8b94db2021-12-02T15:38:38ZElectric-field control of ferromagnetism through oxygen ion gating10.1038/s41467-017-02359-62041-1723https://doaj.org/article/d452efc12aaf494e82e9ff231e8b94db2017-12-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-02359-6https://doaj.org/toc/2041-1723It has been suggested that the magnetic properties of metal layers using reversible redox reactions could form the basis of memory devices but this requires fast electric control to be practical. Here the authors demonstrate this on sub-millisecond timescales in a metal–oxide heterostructure.Hao-Bo LiNianpeng LuQinghua ZhangYujia WangDeqiang FengTianzhe ChenShuzhen YangZheng DuanZhuolu LiYujun ShiWeichao WangWei-Hua WangKui JinHui LiuJing MaLin GuCewen NanPu YuNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-7 (2017)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Hao-Bo Li
Nianpeng Lu
Qinghua Zhang
Yujia Wang
Deqiang Feng
Tianzhe Chen
Shuzhen Yang
Zheng Duan
Zhuolu Li
Yujun Shi
Weichao Wang
Wei-Hua Wang
Kui Jin
Hui Liu
Jing Ma
Lin Gu
Cewen Nan
Pu Yu
Electric-field control of ferromagnetism through oxygen ion gating
description It has been suggested that the magnetic properties of metal layers using reversible redox reactions could form the basis of memory devices but this requires fast electric control to be practical. Here the authors demonstrate this on sub-millisecond timescales in a metal–oxide heterostructure.
format article
author Hao-Bo Li
Nianpeng Lu
Qinghua Zhang
Yujia Wang
Deqiang Feng
Tianzhe Chen
Shuzhen Yang
Zheng Duan
Zhuolu Li
Yujun Shi
Weichao Wang
Wei-Hua Wang
Kui Jin
Hui Liu
Jing Ma
Lin Gu
Cewen Nan
Pu Yu
author_facet Hao-Bo Li
Nianpeng Lu
Qinghua Zhang
Yujia Wang
Deqiang Feng
Tianzhe Chen
Shuzhen Yang
Zheng Duan
Zhuolu Li
Yujun Shi
Weichao Wang
Wei-Hua Wang
Kui Jin
Hui Liu
Jing Ma
Lin Gu
Cewen Nan
Pu Yu
author_sort Hao-Bo Li
title Electric-field control of ferromagnetism through oxygen ion gating
title_short Electric-field control of ferromagnetism through oxygen ion gating
title_full Electric-field control of ferromagnetism through oxygen ion gating
title_fullStr Electric-field control of ferromagnetism through oxygen ion gating
title_full_unstemmed Electric-field control of ferromagnetism through oxygen ion gating
title_sort electric-field control of ferromagnetism through oxygen ion gating
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/d452efc12aaf494e82e9ff231e8b94db
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