Room temperature multi-phonon upconversion photoluminescence in monolayer semiconductor WS2

Two-dimensional materials show promise for photon upconversion processes due to their strong photon-exciton and phonon-exciton interactions. Here, the authors report room temperature upconversion photoluminescence in monolayer WS2 with high energy gain up to 150 meV based on variable temperature.

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Autores principales:	J. Jadczak, L. Bryja, J. Kutrowska-Girzycka, P. Kapuściński, M. Bieniek, Y.-S. Huang, P. Hawrylak
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/d4bfaae0f79d41c39518ab0c43822f01
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id	oai:doaj.org-article:d4bfaae0f79d41c39518ab0c43822f01
record_format	dspace
spelling	oai:doaj.org-article:d4bfaae0f79d41c39518ab0c43822f012021-12-02T16:57:20ZRoom temperature multi-phonon upconversion photoluminescence in monolayer semiconductor WS210.1038/s41467-018-07994-12041-1723https://doaj.org/article/d4bfaae0f79d41c39518ab0c43822f012019-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-07994-1https://doaj.org/toc/2041-1723Two-dimensional materials show promise for photon upconversion processes due to their strong photon-exciton and phonon-exciton interactions. Here, the authors report room temperature upconversion photoluminescence in monolayer WS2 with high energy gain up to 150 meV based on variable temperature.J. JadczakL. BryjaJ. Kutrowska-GirzyckaP. KapuścińskiM. BieniekY.-S. HuangP. HawrylakNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q J. Jadczak L. Bryja J. Kutrowska-Girzycka P. Kapuściński M. Bieniek Y.-S. Huang P. Hawrylak Room temperature multi-phonon upconversion photoluminescence in monolayer semiconductor WS2
description	Two-dimensional materials show promise for photon upconversion processes due to their strong photon-exciton and phonon-exciton interactions. Here, the authors report room temperature upconversion photoluminescence in monolayer WS2 with high energy gain up to 150 meV based on variable temperature.
format	article
author	J. Jadczak L. Bryja J. Kutrowska-Girzycka P. Kapuściński M. Bieniek Y.-S. Huang P. Hawrylak
author_facet	J. Jadczak L. Bryja J. Kutrowska-Girzycka P. Kapuściński M. Bieniek Y.-S. Huang P. Hawrylak
author_sort	J. Jadczak
title	Room temperature multi-phonon upconversion photoluminescence in monolayer semiconductor WS2
title_short	Room temperature multi-phonon upconversion photoluminescence in monolayer semiconductor WS2
title_full	Room temperature multi-phonon upconversion photoluminescence in monolayer semiconductor WS2
title_fullStr	Room temperature multi-phonon upconversion photoluminescence in monolayer semiconductor WS2
title_full_unstemmed	Room temperature multi-phonon upconversion photoluminescence in monolayer semiconductor WS2
title_sort	room temperature multi-phonon upconversion photoluminescence in monolayer semiconductor ws2
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/d4bfaae0f79d41c39518ab0c43822f01
work_keys_str_mv	AT jjadczak roomtemperaturemultiphononupconversionphotoluminescenceinmonolayersemiconductorws2 AT lbryja roomtemperaturemultiphononupconversionphotoluminescenceinmonolayersemiconductorws2 AT jkutrowskagirzycka roomtemperaturemultiphononupconversionphotoluminescenceinmonolayersemiconductorws2 AT pkapuscinski roomtemperaturemultiphononupconversionphotoluminescenceinmonolayersemiconductorws2 AT mbieniek roomtemperaturemultiphononupconversionphotoluminescenceinmonolayersemiconductorws2 AT yshuang roomtemperaturemultiphononupconversionphotoluminescenceinmonolayersemiconductorws2 AT phawrylak roomtemperaturemultiphononupconversionphotoluminescenceinmonolayersemiconductorws2
_version_	1718382591593152512

Room temperature multi-phonon upconversion photoluminescence in monolayer semiconductor WS2

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