Structural and optical study of alternating layers of In and GaAs prepared by magnetron sputtering
Currently, the obtention of nano-structures based on III-V materials is expensive. This calls for novel and inexpensive nanostructure manufacturing approaches. In this work we report on the manufacture of a nanostructures consisting of alternating layers of In and GaAs on a Si substrate by magne...
Guardado en:
| Autor principal: | |
|---|---|
| Formato: | article |
| Lenguaje: | EN ES |
| Publicado: |
Pontificia Universidad Javeriana
2019
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/d4eed485872a47fd8fcf15039aaf067a |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Sumario: | Currently, the obtention of nano-structures based on III-V materials
is expensive. This calls for novel and inexpensive nanostructure
manufacturing approaches. In this work we report on the manufacture
of a nanostructures consisting of alternating layers of In and GaAs on
a Si substrate by magnetron sputtering. Furthermore, we characterized
the produced nanostructures using secondary ion mass spectroscopy
(SIMS), X-ray diffraction analysis, and Raman spectroscopy. SIMS
revealed variation in the concentration of In atoms across In/GaAs/
In interphases, and X-ray diffraction revealed planes corresponding to
phases associated with GaAs and InAs due to In interfacial diffusion
across GaAs layers. Finally, in order to study the composition and
cristal quality of the manufactures nanostaructures, Raman spectra
were taken using laser excitation lines of 452 nm, 532 nm, and 562
nm at different points across the nanostructures. This allowed to
determine the transverse and longitudinal optical modes of GaAs and
InAs, characteristic of a two-mode behavior. An acoustic longitudinal
vibrational mode LA(Γ) of GaAs and an acoustic longitudinal mode
activated by disorder (DALA) were observed. These resulted from the
substitution of Ga atoms for In atoms in high concentrations due
to the generation of Ga(VGa) and/or As(VAs) vacancies. This set of
analyses show that magnetron sputtering can be a viable and relatively
low-cost technique to obtain this type of semiconductors.
|
|---|