Characterization of materials using the secondary electron energy spectromicroscopy technique

This paper presents experimental results to show how secondary electron (SE) energy spectroscopy inside a scanning electron microscope (SEM) might become a useful tool for characterising optical materials. It demonstrates how SE energy spectroscopy can quantify and analyse the build-up of hydrocarbo...

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Autores principales:	Avinash Srinivasan, Weiding Han, Minrui Zheng, Anjam Khursheed
Formato:	article
Lenguaje:	EN
Publicado:	Elsevier 2021
Materias:	Scanning electron microscope Secondary electrons Electron energy spectroscopy Materials characterization Semiconductor dopant concentration pn heterojunctions Applied optics. Photonics TA1501-1820 Optics. Light QC350-467
Acceso en línea:	https://doaj.org/article/d50b26d9cd7c4c2ab589eee035ee50d9
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id	oai:doaj.org-article:d50b26d9cd7c4c2ab589eee035ee50d9
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spelling	oai:doaj.org-article:d50b26d9cd7c4c2ab589eee035ee50d92021-12-02T05:03:36ZCharacterization of materials using the secondary electron energy spectromicroscopy technique2590-147810.1016/j.omx.2021.100121https://doaj.org/article/d50b26d9cd7c4c2ab589eee035ee50d92021-12-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S2590147821000486https://doaj.org/toc/2590-1478This paper presents experimental results to show how secondary electron (SE) energy spectroscopy inside a scanning electron microscope (SEM) might become a useful tool for characterising optical materials. It demonstrates how SE energy spectroscopy can quantify and analyse the build-up of hydrocarbon contamination layers on metal surfaces, potentially useful for monitoring the degradation of metallic mirror coatings. Experimental results are presented to illustrate how the SE energy spectral method can be used to measure dopant concentration in bulk semiconductor samples and the in-built voltage of pn junction heterojunctions. This capability, together with the SEM's ability to provide high spatial resolution, points towards SE energy spectroscopy becoming a powerful analytical technique for quantitatively mapping optoelectronic semiconductors parameters on the nanoscale.Avinash SrinivasanWeiding HanMinrui ZhengAnjam KhursheedElsevierarticleScanning electron microscopeSecondary electronsElectron energy spectroscopyMaterials characterizationSemiconductor dopant concentrationpn heterojunctionsApplied optics. PhotonicsTA1501-1820Optics. LightQC350-467ENOptical Materials: X, Vol 12, Iss , Pp 100121- (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Scanning electron microscope Secondary electrons Electron energy spectroscopy Materials characterization Semiconductor dopant concentration pn heterojunctions Applied optics. Photonics TA1501-1820 Optics. Light QC350-467
spellingShingle	Scanning electron microscope Secondary electrons Electron energy spectroscopy Materials characterization Semiconductor dopant concentration pn heterojunctions Applied optics. Photonics TA1501-1820 Optics. Light QC350-467 Avinash Srinivasan Weiding Han Minrui Zheng Anjam Khursheed Characterization of materials using the secondary electron energy spectromicroscopy technique
description	This paper presents experimental results to show how secondary electron (SE) energy spectroscopy inside a scanning electron microscope (SEM) might become a useful tool for characterising optical materials. It demonstrates how SE energy spectroscopy can quantify and analyse the build-up of hydrocarbon contamination layers on metal surfaces, potentially useful for monitoring the degradation of metallic mirror coatings. Experimental results are presented to illustrate how the SE energy spectral method can be used to measure dopant concentration in bulk semiconductor samples and the in-built voltage of pn junction heterojunctions. This capability, together with the SEM's ability to provide high spatial resolution, points towards SE energy spectroscopy becoming a powerful analytical technique for quantitatively mapping optoelectronic semiconductors parameters on the nanoscale.
format	article
author	Avinash Srinivasan Weiding Han Minrui Zheng Anjam Khursheed
author_facet	Avinash Srinivasan Weiding Han Minrui Zheng Anjam Khursheed
author_sort	Avinash Srinivasan
title	Characterization of materials using the secondary electron energy spectromicroscopy technique
title_short	Characterization of materials using the secondary electron energy spectromicroscopy technique
title_full	Characterization of materials using the secondary electron energy spectromicroscopy technique
title_fullStr	Characterization of materials using the secondary electron energy spectromicroscopy technique
title_full_unstemmed	Characterization of materials using the secondary electron energy spectromicroscopy technique
title_sort	characterization of materials using the secondary electron energy spectromicroscopy technique
publisher	Elsevier
publishDate	2021
url	https://doaj.org/article/d50b26d9cd7c4c2ab589eee035ee50d9
work_keys_str_mv	AT avinashsrinivasan characterizationofmaterialsusingthesecondaryelectronenergyspectromicroscopytechnique AT weidinghan characterizationofmaterialsusingthesecondaryelectronenergyspectromicroscopytechnique AT minruizheng characterizationofmaterialsusingthesecondaryelectronenergyspectromicroscopytechnique AT anjamkhursheed characterizationofmaterialsusingthesecondaryelectronenergyspectromicroscopytechnique
_version_	1718400679075119104

Characterization of materials using the secondary electron energy spectromicroscopy technique

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