Low-temperature properties of semimetal nanowires

A systematic study of the electrical resistance and thermopower of Bi nanowires has revealed the occurrence of a critical thickness of the wire below which structural defects can strongly influence the charge transport. At low temperatures, in Bi nanowires fabricated by the melt spinning method, the...

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Autores principales:	Condrea, Eugeniu, Nicorici, Andrei
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2013
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/d532a3c2a4924654afcd0b7c7d2ec21a
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spelling	oai:doaj.org-article:d532a3c2a4924654afcd0b7c7d2ec21a2021-11-21T11:59:52ZLow-temperature properties of semimetal nanowires2537-63651810-648Xhttps://doaj.org/article/d532a3c2a4924654afcd0b7c7d2ec21a2013-06-01T00:00:00Zhttps://mjps.nanotech.md/archive/2013/article/29773https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365A systematic study of the electrical resistance and thermopower of Bi nanowires has revealed the occurrence of a critical thickness of the wire below which structural defects can strongly influence the charge transport. At low temperatures, in Bi nanowires fabricated by the melt spinning method, the contribution of holes to the thermopower dominates over the electron contribution. Thermoelectric parameters of Bi nanowires may be controlled by applying a thermal treatment and/or a uniaxial pressure. A fairly high value of thermoelectric power factor has been found in a temperature range of 80–300 K, where the mechanism of electron transport is operating in the thermopower.Condrea, EugeniuNicorici, AndreiD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 12, Iss 3-4, Pp 238-248 (2013)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Condrea, Eugeniu Nicorici, Andrei Low-temperature properties of semimetal nanowires
description	A systematic study of the electrical resistance and thermopower of Bi nanowires has revealed the occurrence of a critical thickness of the wire below which structural defects can strongly influence the charge transport. At low temperatures, in Bi nanowires fabricated by the melt spinning method, the contribution of holes to the thermopower dominates over the electron contribution. Thermoelectric parameters of Bi nanowires may be controlled by applying a thermal treatment and/or a uniaxial pressure. A fairly high value of thermoelectric power factor has been found in a temperature range of 80–300 K, where the mechanism of electron transport is operating in the thermopower.
format	article
author	Condrea, Eugeniu Nicorici, Andrei
author_facet	Condrea, Eugeniu Nicorici, Andrei
author_sort	Condrea, Eugeniu
title	Low-temperature properties of semimetal nanowires
title_short	Low-temperature properties of semimetal nanowires
title_full	Low-temperature properties of semimetal nanowires
title_fullStr	Low-temperature properties of semimetal nanowires
title_full_unstemmed	Low-temperature properties of semimetal nanowires
title_sort	low-temperature properties of semimetal nanowires
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2013
url	https://doaj.org/article/d532a3c2a4924654afcd0b7c7d2ec21a
work_keys_str_mv	AT condreaeugeniu lowtemperaturepropertiesofsemimetalnanowires AT nicoriciandrei lowtemperaturepropertiesofsemimetalnanowires
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Low-temperature properties of semimetal nanowires

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