A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile
In this article, we investigate a 4H-SiC super- junction (SJ) MOSFET structure with a charge-imbalance doping-profile. According to our numerical simulations and comparisons with the conventional SiC VDMOS (C-VDMOS) and SiC SJ VDMOS (SJ-VDMOS) devices, the SJ-MOD structure offers a better trade-off...
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| Autores principales: | , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/d58c3b11aeab4b3eb825d025f9b2842b |
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| Sumario: | In this article, we investigate a 4H-SiC super- junction (SJ) MOSFET structure with a charge-imbalance doping-profile. According to our numerical simulations and comparisons with the conventional SiC VDMOS (C-VDMOS) and SiC SJ VDMOS (SJ-VDMOS) devices, the SJ-MOD structure offers a better trade-off between breakdown voltage (<italic>BV</italic>) and specific on-resistance (<inline-formula> <tex-math notation="LaTeX">$R_{on,sp}$ </tex-math></inline-formula>). This leads to a high figure of merit (<inline-formula> <tex-math notation="LaTeX">$FOM=BV^{2}/R_{on,sp}$ </tex-math></inline-formula>). In addition, due to the reduced electric field peak, the single-event burnout (SEB) of the device is significantly improved. The simulation results indicate that, using a LET value of 0.1 pC/<inline-formula> <tex-math notation="LaTeX">${\mu }\text{m}$ </tex-math></inline-formula> and a 3000K global device temperature as the criterion for burning, the specific burnout-threshold voltage (using the optimal parameters of the proposed structure) exceeds that of the conventional structure. This indicates that the modified super-junction structure can indeed be used for different voltage-classes of the hardening SiC super-junction devices in the future. |
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