A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile
In this article, we investigate a 4H-SiC super- junction (SJ) MOSFET structure with a charge-imbalance doping-profile. According to our numerical simulations and comparisons with the conventional SiC VDMOS (C-VDMOS) and SiC SJ VDMOS (SJ-VDMOS) devices, the SJ-MOD structure offers a better trade-off...
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2021
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oai:doaj.org-article:d58c3b11aeab4b3eb825d025f9b2842b2021-11-19T00:01:57ZA High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile2168-673410.1109/JEDS.2021.3125706https://doaj.org/article/d58c3b11aeab4b3eb825d025f9b2842b2021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9606197/https://doaj.org/toc/2168-6734In this article, we investigate a 4H-SiC super- junction (SJ) MOSFET structure with a charge-imbalance doping-profile. According to our numerical simulations and comparisons with the conventional SiC VDMOS (C-VDMOS) and SiC SJ VDMOS (SJ-VDMOS) devices, the SJ-MOD structure offers a better trade-off between breakdown voltage (<italic>BV</italic>) and specific on-resistance (<inline-formula> <tex-math notation="LaTeX">$R_{on,sp}$ </tex-math></inline-formula>). This leads to a high figure of merit (<inline-formula> <tex-math notation="LaTeX">$FOM=BV^{2}/R_{on,sp}$ </tex-math></inline-formula>). In addition, due to the reduced electric field peak, the single-event burnout (SEB) of the device is significantly improved. The simulation results indicate that, using a LET value of 0.1 pC/<inline-formula> <tex-math notation="LaTeX">${\mu }\text{m}$ </tex-math></inline-formula> and a 3000K global device temperature as the criterion for burning, the specific burnout-threshold voltage (using the optimal parameters of the proposed structure) exceeds that of the conventional structure. This indicates that the modified super-junction structure can indeed be used for different voltage-classes of the hardening SiC super-junction devices in the future.Hao HuangYing WangCheng-Hao YuZhao-Huan TangXing-Ji LiJian-Qun YangFei CaoIEEEarticleSiC MOSFETbreakdown voltagespecific on-resistancefigure of meritElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 9, Pp 1084-1092 (2021) |
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SiC MOSFET breakdown voltage specific on-resistance figure of merit Electrical engineering. Electronics. Nuclear engineering TK1-9971 |
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SiC MOSFET breakdown voltage specific on-resistance figure of merit Electrical engineering. Electronics. Nuclear engineering TK1-9971 Hao Huang Ying Wang Cheng-Hao Yu Zhao-Huan Tang Xing-Ji Li Jian-Qun Yang Fei Cao A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile |
| description |
In this article, we investigate a 4H-SiC super- junction (SJ) MOSFET structure with a charge-imbalance doping-profile. According to our numerical simulations and comparisons with the conventional SiC VDMOS (C-VDMOS) and SiC SJ VDMOS (SJ-VDMOS) devices, the SJ-MOD structure offers a better trade-off between breakdown voltage (<italic>BV</italic>) and specific on-resistance (<inline-formula> <tex-math notation="LaTeX">$R_{on,sp}$ </tex-math></inline-formula>). This leads to a high figure of merit (<inline-formula> <tex-math notation="LaTeX">$FOM=BV^{2}/R_{on,sp}$ </tex-math></inline-formula>). In addition, due to the reduced electric field peak, the single-event burnout (SEB) of the device is significantly improved. The simulation results indicate that, using a LET value of 0.1 pC/<inline-formula> <tex-math notation="LaTeX">${\mu }\text{m}$ </tex-math></inline-formula> and a 3000K global device temperature as the criterion for burning, the specific burnout-threshold voltage (using the optimal parameters of the proposed structure) exceeds that of the conventional structure. This indicates that the modified super-junction structure can indeed be used for different voltage-classes of the hardening SiC super-junction devices in the future. |
| format |
article |
| author |
Hao Huang Ying Wang Cheng-Hao Yu Zhao-Huan Tang Xing-Ji Li Jian-Qun Yang Fei Cao |
| author_facet |
Hao Huang Ying Wang Cheng-Hao Yu Zhao-Huan Tang Xing-Ji Li Jian-Qun Yang Fei Cao |
| author_sort |
Hao Huang |
| title |
A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile |
| title_short |
A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile |
| title_full |
A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile |
| title_fullStr |
A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile |
| title_full_unstemmed |
A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile |
| title_sort |
high-performance sic super-junction mosfet with a step-doping profile |
| publisher |
IEEE |
| publishDate |
2021 |
| url |
https://doaj.org/article/d58c3b11aeab4b3eb825d025f9b2842b |
| work_keys_str_mv |
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