Investigation on Film Quality and Photophysical Properties of Narrow Bandgap Molecular Semiconductor Thin Film and Its Solar Cell Application
Hexane-1,6-diammonium pentaiodobismuth (HDA-BiI<sub>5</sub>) is one of the narrowest bandgap molecular semiconductor reported in recent years. Through the study of its energy band structure, it can be identified as an N-type semiconductor and is able to absorb most of the visible light,...
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| Autores principales: | , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/d5c2136ba248475a9576eda93879e777 |
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| Sumario: | Hexane-1,6-diammonium pentaiodobismuth (HDA-BiI<sub>5</sub>) is one of the narrowest bandgap molecular semiconductor reported in recent years. Through the study of its energy band structure, it can be identified as an N-type semiconductor and is able to absorb most of the visible light, making it suitable to fabricate solar cells. In this paper, SnO<sub>2</sub> was used as an electron transport layer in HDA-BiI<sub>5</sub>-based solar cells, for its higher carrier mobility compared with TiO<sub>2</sub>, which is the electron transport layer used in previous researches. In addition, the dilution ratio of SnO<sub>2</sub> solution has an effect on both the morphology and photophysical properties of HDA-BiI<sub>5</sub> films. At the dilution ratio of SnO<sub>2</sub>:H<sub>2</sub>O = 3:8, the HDA-BiI<sub>5</sub> film has a better morphology and is less defect inside, and the corresponding device exhibited the best photovoltaic performance. |
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