Investigation on Film Quality and Photophysical Properties of Narrow Bandgap Molecular Semiconductor Thin Film and Its Solar Cell Application

Hexane-1,6-diammonium pentaiodobismuth (HDA-BiI<sub>5</sub>) is one of the narrowest bandgap molecular semiconductor reported in recent years. Through the study of its energy band structure, it can be identified as an N-type semiconductor and is able to absorb most of the visible light,...

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Autores principales:	Xiaotong Li, Xiaoping Zou, Chunqian Zhang, Jin Cheng, Guangdong Li, Yifei Wang, Xiaolan Wang, Keke Song, Baokai Ren, Junming Li
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	molecular semiconductor solar cell SnO<sub>2</sub> thin film Engineering (General). Civil engineering (General) TA1-2040
Acceso en línea:	https://doaj.org/article/d5c2136ba248475a9576eda93879e777
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spelling	oai:doaj.org-article:d5c2136ba248475a9576eda93879e7772021-11-25T17:15:46ZInvestigation on Film Quality and Photophysical Properties of Narrow Bandgap Molecular Semiconductor Thin Film and Its Solar Cell Application10.3390/coatings111113002079-6412https://doaj.org/article/d5c2136ba248475a9576eda93879e7772021-10-01T00:00:00Zhttps://www.mdpi.com/2079-6412/11/11/1300https://doaj.org/toc/2079-6412Hexane-1,6-diammonium pentaiodobismuth (HDA-BiI<sub>5</sub>) is one of the narrowest bandgap molecular semiconductor reported in recent years. Through the study of its energy band structure, it can be identified as an N-type semiconductor and is able to absorb most of the visible light, making it suitable to fabricate solar cells. In this paper, SnO<sub>2</sub> was used as an electron transport layer in HDA-BiI<sub>5</sub>-based solar cells, for its higher carrier mobility compared with TiO<sub>2</sub>, which is the electron transport layer used in previous researches. In addition, the dilution ratio of SnO<sub>2</sub> solution has an effect on both the morphology and photophysical properties of HDA-BiI<sub>5</sub> films. At the dilution ratio of SnO<sub>2</sub>:H<sub>2</sub>O = 3:8, the HDA-BiI<sub>5</sub> film has a better morphology and is less defect inside, and the corresponding device exhibited the best photovoltaic performance.Xiaotong LiXiaoping ZouChunqian ZhangJin ChengGuangdong LiYifei WangXiaolan WangKeke SongBaokai RenJunming LiMDPI AGarticlemolecular semiconductorsolar cellSnO<sub>2</sub>thin filmEngineering (General). Civil engineering (General)TA1-2040ENCoatings, Vol 11, Iss 1300, p 1300 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	molecular semiconductor solar cell SnO<sub>2</sub> thin film Engineering (General). Civil engineering (General) TA1-2040
spellingShingle	molecular semiconductor solar cell SnO<sub>2</sub> thin film Engineering (General). Civil engineering (General) TA1-2040 Xiaotong Li Xiaoping Zou Chunqian Zhang Jin Cheng Guangdong Li Yifei Wang Xiaolan Wang Keke Song Baokai Ren Junming Li Investigation on Film Quality and Photophysical Properties of Narrow Bandgap Molecular Semiconductor Thin Film and Its Solar Cell Application
description	Hexane-1,6-diammonium pentaiodobismuth (HDA-BiI<sub>5</sub>) is one of the narrowest bandgap molecular semiconductor reported in recent years. Through the study of its energy band structure, it can be identified as an N-type semiconductor and is able to absorb most of the visible light, making it suitable to fabricate solar cells. In this paper, SnO<sub>2</sub> was used as an electron transport layer in HDA-BiI<sub>5</sub>-based solar cells, for its higher carrier mobility compared with TiO<sub>2</sub>, which is the electron transport layer used in previous researches. In addition, the dilution ratio of SnO<sub>2</sub> solution has an effect on both the morphology and photophysical properties of HDA-BiI<sub>5</sub> films. At the dilution ratio of SnO<sub>2</sub>:H<sub>2</sub>O = 3:8, the HDA-BiI<sub>5</sub> film has a better morphology and is less defect inside, and the corresponding device exhibited the best photovoltaic performance.
format	article
author	Xiaotong Li Xiaoping Zou Chunqian Zhang Jin Cheng Guangdong Li Yifei Wang Xiaolan Wang Keke Song Baokai Ren Junming Li
author_facet	Xiaotong Li Xiaoping Zou Chunqian Zhang Jin Cheng Guangdong Li Yifei Wang Xiaolan Wang Keke Song Baokai Ren Junming Li
author_sort	Xiaotong Li
title	Investigation on Film Quality and Photophysical Properties of Narrow Bandgap Molecular Semiconductor Thin Film and Its Solar Cell Application
title_short	Investigation on Film Quality and Photophysical Properties of Narrow Bandgap Molecular Semiconductor Thin Film and Its Solar Cell Application
title_full	Investigation on Film Quality and Photophysical Properties of Narrow Bandgap Molecular Semiconductor Thin Film and Its Solar Cell Application
title_fullStr	Investigation on Film Quality and Photophysical Properties of Narrow Bandgap Molecular Semiconductor Thin Film and Its Solar Cell Application
title_full_unstemmed	Investigation on Film Quality and Photophysical Properties of Narrow Bandgap Molecular Semiconductor Thin Film and Its Solar Cell Application
title_sort	investigation on film quality and photophysical properties of narrow bandgap molecular semiconductor thin film and its solar cell application
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/d5c2136ba248475a9576eda93879e777
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Investigation on Film Quality and Photophysical Properties of Narrow Bandgap Molecular Semiconductor Thin Film and Its Solar Cell Application

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