Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI3 perovskite photovoltaics

Abstract We report the findings of a study into the suitability of copper (I) thiocyanate (CuSCN) as a hole-transport layer in inverted photovoltaic (PV) devices based on the black gamma phase (B-γ) of CsSnI3 perovskite. Remarkably, when B-γ-CsSnI3 perovskite is deposited from a dimethylformamide so...

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Autores principales:	Anjana Wijesekara, Silvia Varagnolo, G. Dinesha M. R. Dabera, Kenneth P. Marshall, H. Jessica Pereira, Ross A. Hatton
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Hole Transport Layer (HTL) Perovskite Photovoltaics (PPV) Perovskite Deposition Complete Displacement Perovskite Films Medicine R Science Q
Acceso en línea:	https://doaj.org/article/d6062f0a968f49f39616dfbbf3368a0d
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spelling	oai:doaj.org-article:d6062f0a968f49f39616dfbbf3368a0d2021-12-02T15:05:30ZAssessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI3 perovskite photovoltaics10.1038/s41598-018-33987-72045-2322https://doaj.org/article/d6062f0a968f49f39616dfbbf3368a0d2018-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-33987-7https://doaj.org/toc/2045-2322Abstract We report the findings of a study into the suitability of copper (I) thiocyanate (CuSCN) as a hole-transport layer in inverted photovoltaic (PV) devices based on the black gamma phase (B-γ) of CsSnI3 perovskite. Remarkably, when B-γ-CsSnI3 perovskite is deposited from a dimethylformamide solution onto a 180–190 nm thick CuSCN film supported on an indium-tin oxide (ITO) electrode, the CuSCN layer is completely displaced leaving a perovskite layer with high uniformity and coverage of the underlying ITO electrode. This finding is confirmed by detailed analysis of the thickness and composition of the film that remains after perovskite deposition, together with photovoltaic device studies. The results of this study show that, whilst CuSCN has proved to be an excellent hole-extraction layer for high performance lead-perovskite and organic photovoltaics, it is unsuitable as a hole-transport layer in inverted B-γ-CsSnI3 perovskite photovoltaics processed from solution.Anjana WijesekaraSilvia VaragnoloG. Dinesha M. R. DaberaKenneth P. MarshallH. Jessica PereiraRoss A. HattonNature PortfolioarticleHole Transport Layer (HTL)Perovskite Photovoltaics (PPV)Perovskite DepositionComplete DisplacementPerovskite FilmsMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-7 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Hole Transport Layer (HTL) Perovskite Photovoltaics (PPV) Perovskite Deposition Complete Displacement Perovskite Films Medicine R Science Q
spellingShingle	Hole Transport Layer (HTL) Perovskite Photovoltaics (PPV) Perovskite Deposition Complete Displacement Perovskite Films Medicine R Science Q Anjana Wijesekara Silvia Varagnolo G. Dinesha M. R. Dabera Kenneth P. Marshall H. Jessica Pereira Ross A. Hatton Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI3 perovskite photovoltaics
description	Abstract We report the findings of a study into the suitability of copper (I) thiocyanate (CuSCN) as a hole-transport layer in inverted photovoltaic (PV) devices based on the black gamma phase (B-γ) of CsSnI3 perovskite. Remarkably, when B-γ-CsSnI3 perovskite is deposited from a dimethylformamide solution onto a 180–190 nm thick CuSCN film supported on an indium-tin oxide (ITO) electrode, the CuSCN layer is completely displaced leaving a perovskite layer with high uniformity and coverage of the underlying ITO electrode. This finding is confirmed by detailed analysis of the thickness and composition of the film that remains after perovskite deposition, together with photovoltaic device studies. The results of this study show that, whilst CuSCN has proved to be an excellent hole-extraction layer for high performance lead-perovskite and organic photovoltaics, it is unsuitable as a hole-transport layer in inverted B-γ-CsSnI3 perovskite photovoltaics processed from solution.
format	article
author	Anjana Wijesekara Silvia Varagnolo G. Dinesha M. R. Dabera Kenneth P. Marshall H. Jessica Pereira Ross A. Hatton
author_facet	Anjana Wijesekara Silvia Varagnolo G. Dinesha M. R. Dabera Kenneth P. Marshall H. Jessica Pereira Ross A. Hatton
author_sort	Anjana Wijesekara
title	Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI3 perovskite photovoltaics
title_short	Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI3 perovskite photovoltaics
title_full	Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI3 perovskite photovoltaics
title_fullStr	Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI3 perovskite photovoltaics
title_full_unstemmed	Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI3 perovskite photovoltaics
title_sort	assessing the suitability of copper thiocyanate as a hole-transport layer in inverted cssni3 perovskite photovoltaics
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/d6062f0a968f49f39616dfbbf3368a0d
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Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI3 perovskite photovoltaics

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